BSC430N25NSFDATMA1

$4.00

Description：MOSFET N-CH 250V TSON-8
Series：OptiMOS™ FD
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:79bf5ea6fab5 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC430N25NSFDATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 250V TSON-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC430N25NSFDATMA1

Description：MOSFET N-CH 250V TSON-8
Series：OptiMOS™ FD
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSON-8-3
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC430N25NSFDATMA1

BSC430N25NSFDATMA1

Single FETs, MOSFETs Overview

The BSC430N25NSFDATMA1 is an N-channel OptiMOS FD power transistor rated for a maximum drain-source voltage of 250 V. It features a typical on-resistance of 34 mΩ and supports a continuous drain current of 36 A at 25°C case temperature. The device operates within a junction temperature range of -55°C to 175°C and utilizes a TSON-8-3 package.

Single FETs, MOSFETs Feature Summary

Optimized gate charge and on-resistance product for high-frequency switching
Integrated fast reverse diode with low forward voltage drop
Qualified for industrial applications per JEDEC standards

Single FETs, MOSFETs Applications

High-frequency switching circuits
Synchronous rectification systems
Industrial power conversion

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code suffix against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure compliance with RoHS and halogen-free requirements as stated in the datasheet. Confirm availability status directly with authorized distributors, as component lifecycle stages may affect procurement timelines.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust 250 V blocking capability combined with low conduction losses. The integrated fast diode simplifies synchronous rectifier topologies by eliminating external body diode limitations. Verify thermal management strategies align with the specified junction-to-case thermal resistance values under expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS FD family, designed specifically for advanced power management applications. It represents a generation of MOSFETs optimized for efficiency through reduced gate charge and enhanced thermal performance. The technology focuses on minimizing switching losses while maintaining high reliability in demanding industrial environments.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure replacement parts match the 250 V rating, TSON-8-3 footprint, and thermal characteristics. Validate that any alternative maintains equivalent gate charge and on-resistance profiles for circuit compatibility.