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BSC500N20NS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 200V 24A TDSON-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC500N20NS3GATMA1
- Description：MOSFET N-CH 200V 24A TDSON-8
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id：4V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1580 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：96W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC500N20NS3GATMA1
Single FETs, MOSFETs Overview
The BSC500N20NS3GATMA1 is an OptiMOS 3 N-channel power transistor with a 200 V drain-source breakdown voltage. It features a maximum continuous drain current of 24 A and a typical on-resistance of 42 mΩ at VGS=10 V. The device operates within a junction temperature range of -55 °C to +150 °C and dissipates up to 96 W. Key dynamic parameters include a total gate charge of 20 nC, turn-on delay time of 14 ns, rise time of 5 ns, turn-off delay time of 28 ns, and fall time of 7 ns.
Single FETs, MOSFETs Feature Summary
- Optimized for high-frequency switching and synchronous rectification applications
- Features excellent gate charge x RDS(on) figure of merit
- Pb-free lead plating and RoHS compliant construction
Single FETs, MOSFETs Applications
- High-frequency switching circuits
- Synchronous rectification modules
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code against official Infineon documentation to ensure correct package and marking identification. Confirm that the component meets target application requirements as qualified according to JEDEC standards. Check for halogen-free compliance per IEC61249-2-21 before integration into final assemblies.
Single FETs, MOSFETs Selection Notes
Select this component when a 200 V rating and low on-resistance are required for efficient power conversion. Consider the thermal resistance values for heat dissipation planning in compact designs. Evaluate the gate charge characteristics against driver capabilities to optimize switching speed and minimize losses.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS 3 family of power transistors from Infineon Technologies. It utilizes PG-TDSON-8 packaging to provide a compact footprint suitable for surface-mount assembly. The technology focuses on balancing conduction losses with switching performance for modern power electronics.
Single FETs, MOSFETs Replacement Considerations
Consult official replacement lists or cross-reference guides provided by Infineon for verified substitutes. Ensure any alternative component matches the voltage, current, and thermal specifications without compromising circuit safety.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
