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BSC600N25NS3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 250V 25A TDSON-8-1. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC600N25NS3GATMA1
- Description：MOSFET N-CH 250V 25A TDSON-8-1
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：60mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2350 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC600N25NS3GATMA1
Single FETs, MOSFETs Overview
The BSC600N25NS3 G is an OptiMOS™ 3 power transistor featuring a 250 V drain-source breakdown voltage and a maximum on-resistance of 60 mΩ. It supports a continuous drain current of 25 A at 25°C case temperature and handles pulsed currents up to 100 A. The device operates within a junction temperature range of -55°C to 150°C, with a total power dissipation of 125 W. Key electrical parameters include a gate threshold voltage of 2 V to 4 V, a typical gate charge of 22 nC, and a thermal resistance from junction to case of 1 K/W.
Single FETs, MOSFETs Feature Summary
- Optimized for high-frequency switching and synchronous rectification applications
- Features excellent gate charge x RDS(on) figure of merit
- Qualified according to JEDEC standards for target applications
- Compliant with RoHS requirements and halogen-free manufacturing
Single FETs, MOSFETs Applications
- High-frequency switching circuits
- Synchronous rectification designs
- Power conversion systems requiring low on-resistance
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code BSC600N25NS3 G against official Infineon documentation to ensure correct package type PG-TDSON-8. Confirm that the component meets all required environmental qualifications, including RoHS compliance and halogen-free status, before integration into final assemblies.
Single FETs, MOSFETs Selection Notes
Select this component when a 250 V N-channel MOSFET with low conduction losses is required. Ensure the application design accommodates the 1 K/W junction-to-case thermal resistance and verify that the PCB layout supports the necessary heat dissipation for the specified 125 W power rating.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™ 3 family of power transistors manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a surface-mount PG-TDSON-8 package. The device is designed as a single N-channel enhancement mode transistor suitable for robust power management tasks.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Do not assume compatibility based solely on matching voltage or current ratings without verifying pinout and thermal characteristics.
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