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BSC670N25NSFDATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 250V 24A TDSON-8-1. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC670N25NSFDATMA1
- Description：MOSFET N-CH 250V 24A TDSON-8-1
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：67mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id：4V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2410 pF @ 125 V
- FET Feature：-
- Power Dissipation (Max)：150W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC670N25NSFDATMA1
Single FETs, MOSFETs Overview
The BSC670N25NSFD is an N-channel OptiMOS™3 power transistor rated for a maximum drain-source voltage of 250 V. It features a typical on-resistance of 59 mΩ and supports a continuous drain current of 24 A at 25°C case temperature, with a pulsed current capability of 96 A. The device operates within a junction temperature range of -55 °C to 175 °C. Key electrical parameters include a gate threshold voltage between 2 V and 4 V, total gate charge of 22 nC typ., and thermal resistance from junction to case of 0.6 K/W typ.
Single FETs, MOSFETs Feature Summary
- Optimized gate charge and on-resistance product for high-frequency switching efficiency
- Integrated internal body diode with fast reverse recovery characteristics
- Qualified according to JEDEC standards for target applications
Single FETs, MOSFETs Applications
- High-frequency switching circuits
- Synchronous rectification applications
- Power conversion systems requiring low conduction losses
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix 'DATMA1' against official Infineon documentation to confirm tape-and-reel packaging details. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance and halogen-free status as stated in the datasheet specifications before integration into final assemblies.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring 250 V blocking capability with low conduction losses. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Consider the gate threshold voltage range when designing drive circuits to ensure reliable turn-on across the operating temperature range.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™3 family of power transistors designed for efficient power switching. It utilizes PG-TDSON-8 surface-mount packaging to facilitate compact PCB layouts. The technology focuses on minimizing the figure of merit between gate charge and on-resistance for improved overall system performance.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference tools or contact Infineon directly for verified substitute part numbers. Do not assume functional compatibility with other 250 V MOSFETs without verifying pinout, thermal, and electrical parameter alignment.
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