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BSC882N03MSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 34V 22A/100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC882N03MSGATMA1
- Description：MOSFET N-CH 34V 22A/100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：34 V
- Current - Continuous Drain (Id) @ 25°C：22A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：55 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4300 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 69W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC882N03MSGATMA1
Single FETs, MOSFETs Overview
The BSC882N03MSGATMA1 is a single N-channel Power-MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 22 A. The device offers a maximum on-resistance (Rds(on)) of 7.5 mΩ at a gate-source voltage of 10 V. It operates within a temperature range of -55°C to +150°C and is housed in a TDSON-8 surface-mount package.
Single FETs, MOSFETs Feature Summary
- OptiMOS technology provides low conduction losses and optimized switching performance.
- Enhanced thermal design supports high power dissipation in compact packages.
- Robust avalanche capability ensures reliability under transient load conditions.
Single FETs, MOSFETs Applications
- Motor control systems
- Power supply circuits
- Load switching applications
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including suffixes such as ATMA1 for specific tape-and-reel packaging configurations. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure that the procurement channel sources directly from authorized distributors to guarantee component authenticity and traceability.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a balance between low on-resistance and high current handling in a small footprint. Compare Rds(on) values against alternative packages to evaluate thermal management requirements. Consider the gate charge specifications when designing drive circuits for optimal switching efficiency.
Single FETs, MOSFETs Part Context
This part belongs to the BSC882N03 series of N-channel MOSFETs. It shares the same die and electrical characteristics with the BSC882N03MSG variant, differing primarily in the trailing packaging code which indicates the reel configuration for automated assembly processes.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include BSC882N03MSG. Verify pinout compatibility and thermal resistance parameters before substituting with other manufacturers' parts offering similar 30V/22A ratings.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
