Single FETs, MOSFETs BSC883N03MSGATMA1 product image

BSC883N03MSGATMA1

$0.92
  • Description:MOSFET N-CH 34V 19A/98A TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:9c77b294851d Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BSC883N03MSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 34V 19A/98A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC883N03MSGATMA1

  • Description:MOSFET N-CH 34V 19A/98A TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):34 V
  • Current - Continuous Drain (Id) @ 25°C:19A (Ta), 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:3.8mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3200 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 57W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TDSON-8-1
  • Package / Case:8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC883N03MSGATMA1

BSC883N03MSGATMA1

Single FETs, MOSFETs Overview

The BSC883N03MSGATMA1 is a single N-channel Power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a 34V drain-source voltage rating and operates in an enhancement mode. The device supports a continuous drain current of 19A at case temperature (Tc) and 19A at ambient temperature (Ta), with a peak pulsed current capability of 98A at Tc. Key electrical parameters include a maximum on-resistance (Rds(on)) of 2.5mΩ and a gate-source voltage limit of ±20V. It is housed in a PG-TDSON-8-1 surface-mount package, designed for efficient power switching applications.

Single FETs, MOSFETs Feature Summary

  • OptiMOS technology integration for optimized performance
  • Single N-channel configuration for simple drive requirements
  • Surface-mount PG-TDSON-8-1 package design

Single FETs, MOSFETs Applications

  • Efficient voltage conversion circuits
  • Power switching modules
  • DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix ATMA1 to confirm tape-and-reel packaging and lead frame finish. Confirm the active lifecycle status with the manufacturer prior to finalizing designs, as component availability may vary by region. Ensure the PG-TDSON-8-1 footprint matches the target PCB layout constraints. Cross-reference the datasheet for thermal resistance values relevant to the specific application environment.

Single FETs, MOSFETs Selection Notes

Select this component when a 34V rated N-channel MOSFET is required with low on-resistance characteristics. The TDSON-8-1 package offers a compact solution for space-constrained designs. Consider the 19A continuous current rating against the expected load profile and thermal management capabilities of the system. Verify compatibility with standard logic-level gate drivers if applicable.

Single FETs, MOSFETs Part Context

This part belongs to the BSC883N03 series of single N-channel MOSFETs from Infineon. It shares the same core die technology as other variants in the family but is distinguished by its specific packaging and electrical ratings. The OptiMOS platform provides a balance between conduction losses and switching performance suitable for general-purpose power management tasks.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same family include BSC884N03MSGATMA1, which shares similar packaging but differs in current handling. Designers should verify pinout compatibility and thermal characteristics before swapping components. No other direct cross-brand replacements are confirmed in the provided documentation.

BSC883N03MSGATMA1BSC883N03MSGATMA1
$0.92
Buy Now