Single FETs, MOSFETs BSC884N03MS G product image

BSC884N03MS G

$0.39
  • Description:MOSFET N-CH 34V 17A/85A TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Bulk

SKU:77b4ba85c5e8 Category: Brand:

  
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BSC884N03MS G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 34V 17A/85A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC884N03MS G

  • Description:MOSFET N-CH 34V 17A/85A TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):34 V
  • Current - Continuous Drain (Id) @ 25°C:17A (Ta), 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:4.5mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 50W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TDSON-8-1
  • Package / Case:8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC884N03MS G

BSC884N03MS G

Single FETs, MOSFETs Overview

The BSC884N03MS G is a single N-channel enhancement mode MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TDSON-8 surface-mount package. The device features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 17 A at 25°C. Its maximum on-resistance (Rds(on)) is 4.5 mΩ. The gate-source voltage range is -20 V to +20 V. Power dissipation is rated at 2.5 W, with an operating temperature range from -55°C to +150°C. Switching characteristics include a typical turn-off delay time of 16 ns, fall time of 7.2 ns, and rise time of 6.8 ns.

Single FETs, MOSFETs Feature Summary

  • Single N-channel configuration for efficient power switching applications
  • Enhancement mode operation optimized for low on-resistance performance
  • Surface-mount TDSON-8 packaging designed for automated assembly

Single FETs, MOSFETs Applications

  • DC-DC converter circuits
  • Power management systems
  • Motor control interfaces

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific ordering suffix matches the required tape and reel specifications. Check current lifecycle status as availability may be limited due to production end-of-life notices. Ensure compliance with RoHS directives relevant to your region before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V rating and 17 A continuous current capability are required in a compact TDSON-8 footprint. Evaluate thermal management requirements carefully given the 2.5 W power dissipation limit. Compare switching speeds against system timing constraints using the provided rise and fall time parameters. Ensure gate drive voltages remain within the specified ±20 V limits for reliable operation.

Single FETs, MOSFETs Part Context

This part belongs to the BSC884N03 series of N-channel MOSFETs from Infineon Technologies. It shares the TDSON-8 package form factor with other devices in the lineup but differs in electrical ratings such as current handling and on-resistance. The series targets general-purpose power switching applications requiring moderate voltage and current levels.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin compatibility and electrical parameter overlaps with potential alternatives before substitution.

BSC884N03MS GBSC884N03MS G
$0.39
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