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BSC884N03MS G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 34V 17A/85A TDSON. Review the specifications below when checking this part for your BOM.
The BSC884N03MS G is a single N-channel enhancement mode MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TDSON-8 surface-mount package. The device features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 17 A at 25°C. Its maximum on-resistance (Rds(on)) is 4.5 mΩ. The gate-source voltage range is -20 V to +20 V. Power dissipation is rated at 2.5 W, with an operating temperature range from -55°C to +150°C. Switching characteristics include a typical turn-off delay time of 16 ns, fall time of 7.2 ns, and rise time of 6.8 ns.
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Select this component when a 30 V rating and 17 A continuous current capability are required in a compact TDSON-8 footprint. Evaluate thermal management requirements carefully given the 2.5 W power dissipation limit. Compare switching speeds against system timing constraints using the provided rise and fall time parameters. Ensure gate drive voltages remain within the specified ±20 V limits for reliable operation.
This part belongs to the BSC884N03 series of N-channel MOSFETs from Infineon Technologies. It shares the TDSON-8 package form factor with other devices in the lineup but differs in electrical ratings such as current handling and on-resistance. The series targets general-purpose power switching applications requiring moderate voltage and current levels.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin compatibility and electrical parameter overlaps with potential alternatives before substitution.
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