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BSC886N03LSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 13A/65A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC886N03LSGATMA1
- Description：MOSFET N-CH 30V 13A/65A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：13A (Ta), 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2100 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 39W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC886N03LSGATMA1
Single FETs, MOSFETs Overview
The BSC886N03LSGATMA1 is an N-channel power MOSFET from Infineon's OptiMOS series. It features a PG-TDSON-8 surface-mount package with a drain-source voltage rating of 30 V and a continuous drain current of 13 A at ambient temperature, extending to 65 A at case temperature. The device exhibits a maximum on-resistance of 5 mΩ. It operates within a junction temperature range of -55°C to +150°C and includes thermal protection mechanisms.
Single FETs, MOSFETs Feature Summary
- OptiMOS technology provides low on-resistance for high efficiency
- Enhanced thermal performance via exposed pad design
- Robust avalanche capability for reliable switching
Single FETs, MOSFETs Applications
- DC-DC converter modules
- Power management integrated circuits (PMICs)
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and ordering suffix to ensure compatibility with your design requirements. Confirm that the component meets all relevant RoHS and REACH compliance standards required for your target market. Cross-reference the pinout and thermal pad specifications with your PCB layout guidelines before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a compact N-channel solution with 30 V rating is required. The TDSON-8 package offers a balance between current handling capacity and board space constraints. Consider the thermal resistance characteristics and the specific RDS(on) value at your operating gate voltage to ensure adequate performance in your power stage design.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS family, which utilizes advanced trench gate technology to minimize conduction losses. The BSC886N03LSGATMA1 is designed for general-purpose power switching applications where size and efficiency are critical factors. It serves as a key building block in modern electronic systems requiring reliable low-voltage power control.
Single FETs, MOSFETs Replacement Considerations
Check for direct replacements within the same OptiMOS series or other manufacturers offering equivalent 30 V, 5 mΩ N-channel MOSFETs in PG-TDSON-8 packages. Ensure any substitute matches the pin configuration and thermal characteristics to avoid redesigning the PCB footprint.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
