BSC889N03LSGATMA1

Single FETs, MOSFETs Overview

The BSC889N03LSGATMA1 is a single N-channel silicon power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 13 A at case temperature, with a maximum on-resistance (Rds(on)) of 9 mΩ. The device operates within a junction temperature range of -55 °C to +150 °C and offers a power dissipation rating of 2.5 W at ambient temperature and 28 W at case temperature. Packaged in a TDSON-8 surface-mount format, it includes a gate-source voltage limit of ±20 V and an input capacitance of 1300 pF.

Single FETs, MOSFETs Feature Summary

• OptiMOS technology integration for optimized switching performance
• Low on-resistance characteristic for efficient conduction
• Robust thermal management capabilities across wide temperature ranges

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Power switching applications
• Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version and RoHS compliance status directly with Infineon or authorized distributors before procurement. Confirm that the TDSON-8 package dimensions match your PCB footprint requirements. Ensure that the thermal design accounts for the specified power dissipation limits under actual operating conditions to maintain reliability.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V N-channel MOSFET with low Rds(on) is required in a compact TDSON-8 package. Consider the 13 A current rating and thermal constraints relative to your application's duty cycle and cooling environment. Compare against other OptiMOS variants if higher current capacity or different packaging options are needed.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS family, designed for high-efficiency power switching. The BSC889N03LSGATMA1 specifically targets applications requiring low loss and fast switching in small form factors. It complements other 30 V devices in the lineup by offering a balance between current handling and on-state resistance.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon documentation for verified cross-reference part numbers. Ensure any substitute matches the 30 V rating, N-channel configuration, TDSON-8 package, and electrical characteristics such as Rds(on) and Id.