BSD235C L6327

Overview

The BSD235C is a complementary small-signal transistor featuring N-channel and P-channel enhancement mode MOSFETs in a PG-SOT-363 package. It supports a drain-source voltage of ±20 V with continuous currents of 0.95 A (N) and -0.53 A (P). The device operates within a junction temperature range of -55 °C to +150 °C, dissipating up to 0.5 W. It is rated for avalanche energy and qualified according to AEC-Q101 standards.

Feature Summary

• Complementary N-channel and P-channel configuration
• Super Logic level operation at 2.5 V
• Avalanche energy rated capability
• Automotive qualification per AEC-Q101

Applications

• Logic level switching applications
• Low-voltage power management circuits
• Automotive electronic modules

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance and halogen-free status requirements match project constraints. Cross-reference the exact part number with current datasheet revisions to validate electrical characteristics before finalizing procurement orders.

Selection Notes

Select this component for designs requiring dual-channel logic-level control in a minimal footprint. Ensure gate drive voltages align with the 2.5 V rating for optimal on-state resistance. Verify thermal dissipation limits under maximum ambient conditions. Consider the avalanche rating if inductive load switching is present in the circuit design.

Part Context

This component belongs to the BSD235 series of OptiMOS™ 2 and OptiMOS™-P 2 transistors. It provides a compact solution for low-power switching tasks. The technology integrates silicon planar MOSFET structures optimized for fast switching speeds and low conduction losses in small signal applications.

Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and package dimensions.