ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE SIL CARBIDE 650V 10A TO252
- Series：-
- Mfr：Bourns Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：10A
- Voltage - Forward (Vf) (Max) @ If：1.45 V @ 10 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：50 µA @ 650 V
- Capacitance @ Vr, F：500pF @ 1V, 1MHz
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252 (DPAK)
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
Download product information
Overview
The Bourns BSDD10S65E6 is a Silicon Carbide Schottky diode in a TO-252 (DPAK) package. It features a repetitive peak reverse voltage of 650 V and an average forward current rating of 10 A. The device supports a non-repetitive peak forward surge current of 80 A and operates within a junction temperature range of -55 °C to +175 °C. Electrical characteristics include a maximum forward voltage of 1.7 V at 10 A and 175 °C, with a typical reverse leakage current of 15 μA at 650 V and 175 °C.
Feature Summary
- Low forward voltage drop for high efficiency
- High peak forward surge current capability
- Reduced electromagnetic interference
- Flame retardant epoxy compound
Applications
- Switched-Mode Power Supplies
- Power Factor Correction
- PV inverters
- DC-DC converters
- Telecommunications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and configuration. Confirm RoHS compliance status and halogen-free designation requirements prior to procurement. Ensure thermal management design accounts for the specified junction-to-mounting base thermal resistance values under actual operating conditions.
Selection Notes
Select this component for applications requiring high-frequency rectification with low power loss. Consider the 175 °C maximum operating temperature for high-thermal environments. Evaluate the TO-252 footprint constraints against available board space. Verify that the 650 V rating provides adequate margin for the target circuit's peak reverse voltage stresses.
Part Context
This part belongs to the Bourns Silicon Carbide Schottky Diode series. These components are designed for rectification applications where high efficiency and reduced thermal resistance are critical. The product line offers various styles suitable for diverse power conversion needs.
Replacement Considerations
Consult official cross-reference data for verified substitutes. Ensure any replacement matches the 650 V rating, 10 A current capacity, and TO-252 package dimensions.
