BSDW20G65C2

$5.23

Description：DIODE ARRAY SIC 650V 20A TO-247
Series：-

SKU:da5d0223599f Category: Diode Arrays Brand: Bourns Inc.

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Product introduction

BSDW20G65C2 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Bourns Inc.. Its product description is DIODE ARRAY SIC 650V 20A TO-247. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BSDW20G65C2

Description：DIODE ARRAY SIC 650V 20A TO-247
Series：-
Mfr：Bourns Inc.
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io) (per Diode)：20A
Voltage - Forward (Vf) (Max) @ If：1.7 V @ 10 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：50 µA @ 650 V
Operating Temperature - Junction：-55°C ~ 175°C
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247
Grade：-
Qualification：-

Diode Arrays datasheet and documents for BSDW20G65C2

BSDW20G65C2

Diode Arrays Overview

The Bourns BSDW20G65C2 is a Silicon Carbide Schottky Diode in a TO247-3 package. It features a 650 V repetitive peak reverse voltage and a 20 A average forward current rating. The device supports a maximum operating junction temperature of 175 °C and offers a non-repetitive peak forward surge current of 60 A. Electrical characteristics include a typical forward voltage of 1.45 V at 10 A and 25 °C, with a maximum reverse leakage current of 50 μA at 650 V and 25 °C.

Diode Arrays Feature Summary

High efficiency with low power loss
Low reverse leakage current
High peak forward surge current capability
Reduced electromagnetic interference

Diode Arrays Applications

Switched-Mode Power Supplies (SMPS)
Power Factor Correction (PFC)
PV inverters
DC-DC converters
Motor drives

Diode Arrays Procurement Notes

Verify the specific datasheet revision and ordering suffixes to ensure compliance with RoHS and halogen-free requirements. Confirm that the TO247-3 package dimensions match your PCB layout constraints. Review the absolute maximum ratings for thermal management and derating curves before finalizing the design. Ensure the component meets all safety standards required for your target application environment.

Diode Arrays Selection Notes

Select this component for high-frequency applications requiring low switching losses and high thermal stability. The silicon carbide construction allows operation up to 175 °C, reducing cooling requirements. Consider the 650 V rating and 20 A current capacity when designing power stages. Evaluate the low reverse leakage current benefits for high-voltage efficiency.

Diode Arrays Part Context

This model belongs to Bourns' Silicon Carbide Schottky Diode lineup, designed for rectification in power electronics. The SDW series utilizes advanced SiC substrate technology to achieve superior performance compared to traditional silicon diodes. The TO247-3 package provides robust mechanical mounting and efficient heat dissipation for industrial power systems.

Diode Arrays Replacement Considerations

Consult official Bourns documentation for direct cross-reference part numbers. Verify pinout compatibility and thermal resistance values when substituting similar SiC diodes from other manufacturers. Ensure replacement components meet the same voltage and current ratings.