BSF030NE2LQXUMA1

Single FETs, MOSFETs Overview

BSF030NE2LQXUMA1 is an N-channel Power MOSFET from Infineon's OptiMOS family, housed in a CanPAK-2 SQ (DirectFET) surface-mount package. It features a drain-source voltage of 25 V and a continuous drain current of 75 A at 25°C. The device exhibits a maximum on-resistance of 4.1 mΩ at 4.5 V gate drive. Key electrical parameters include a typical gate charge of 23 nC at 10 V, input capacitance of 1700 pF, and output capacitance of 660 pF. Thermal performance is characterized by a junction-to-case thermal resistance of 1 K/W, with an operating temperature range spanning -40°C to +150°C.

Single FETs, MOSFETs Feature Summary

• OptiMOS technology provides low conduction losses through minimized on-resistance.
• DirectFET package design enables efficient heat dissipation via direct connection to the PCB ground plane.
• Integrated body diode supports synchronous rectification applications.

Single FETs, MOSFETs Applications

• Low-voltage DC-DC converter modules
• Point-of-load power regulation stages
• High-efficiency battery-powered equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix XUMA1 to confirm tape-and-reel packaging configuration. Ensure the component matches the CanPAK-2 SQ footprint dimensions during PCB layout review. Cross-reference the datasheet version for accurate thermal derating curves. Confirm RoHS compliance status if required by local regulations. Validate that the 25V rating aligns with system voltage headroom requirements.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current density in minimal board space. The low gate charge facilitates faster switching speeds compared to standard packages. Consider the 4.1 mΩ resistance at 4.5V VGS for logic-level driving compatibility. Evaluate thermal management needs based on the 1 K/W junction-to-case resistance. Compare against higher voltage variants if system transients exceed 25V.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's BSF series of low-voltage MOSFETs optimized for automotive and industrial power applications. The OptiMOS generation focuses on reducing total gate charge and on-state resistance simultaneously. The DirectFET architecture distinguishes it from traditional leaded packages by eliminating internal parasitic inductance.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified equivalents. Generic cross-references may not match the specific thermal or electrical characteristics of the CanPAK-2 SQ package.