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BSF050N03LQ3G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSF050N03LQ3G
- Description：N-CHANNEL POWER MOSFET
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：15A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3000 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.2W (Ta), 28W (Tc)
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：MG-WDSON-2
- Package / Case：DirectFET™ Isometric MX
Single FETs, MOSFETs datasheet and documents for BSF050N03LQ3G
Single FETs, MOSFETs Overview
The BSF050N03LQ3G is a single N-channel power MOSFET from Infineon Technologies, part of the OptiMOS family. It utilizes CanPAK M technology within an MG-WDSON-2 package. The device features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 15 A at ambient temperature or 60 A at case temperature. Key electrical parameters include a maximum on-resistance (Rds(on)) of 5 mΩ at 20 A and 10 V gate drive, a gate charge (Qg) of 42 nC at 10 V, and an input capacitance (Ciss) of 3000 pF at 15 V. It operates within a junction temperature range of -40°C to +150°C.
Single FETs, MOSFETs Feature Summary
- OptiMOS technology providing low on-resistance for high efficiency
- CanPAK M surface-mount packaging for optimized thermal performance
- Enhancement mode operation with low gate threshold voltage
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Power management systems
- Battery protection modules
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distributors. Confirm RoHS compliance status via official documentation. Check manufacturing date codes against project timelines. Ensure storage conditions meet moisture sensitivity level requirements. Validate package markings match the specific ordering code.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring compact footprint and efficient switching in low-voltage environments. Consider the thermal dissipation capabilities relative to the mounting surface. Evaluate gate drive requirements against the specified threshold and charge values. Assess the trade-off between conduction losses and switching speeds for the target frequency.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS series designed for general-purpose power switching. It represents a silicon-based solution optimized for cost-effective performance in consumer and industrial electronics. The WDSON package facilitates automated assembly and space-constrained designs.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
