BSF077N06NT3GXUMA1

Single FETs, MOSFETs Overview

The BSF077N06NT3 G is an n-Channel Power MOSFET from the OptiMOS™ family, designed for high power density and energy efficiency. It features a 60 V drain-source voltage rating and a maximum on-state resistance of 7.7 mΩ at VGS=10 V. The device supports a continuous drain current of 56 A at TC=25 °C and utilizes the MG-WDSON-2 package with CanPAK technology. This packaging enables double-sided cooling and low parasitic inductance, making it suitable for demanding switched mode power supplies.

Single FETs, MOSFETs Feature Summary

• Optimized for DC/DC converters with ultra-low gate and output charges
• CanPAK package provides superior thermal resistance via top-side metal can cooling
• Low profile design with minimal parasitic package inductances
• Compatible with DirectFET® package footprint and outline

Single FETs, MOSFETs Applications

• DC/DC converters
• Synchronous rectification
• Power distribution
• Motor drive applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the manufacturer's marking layout against official documentation. Confirm that the part number suffix matches the specific tape-and-reel configuration required for automated assembly processes. Ensure compliance with RoHS and halogen-free standards as specified in the datasheet before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when space constraints require a low-profile surface-mount solution with high thermal performance. The low RDS(on) combined with small footprint makes it ideal for high-current applications where minimizing conduction losses is critical. Evaluate the thermal resistance requirements to ensure the PCB copper area meets the recommended specifications for optimal heat dissipation.

Single FETs, MOSFETs Part Context

This component belongs to the OptiMOS™ 60V product line, which targets servers, datacom, and telecom applications. The technology integrates advanced silicon with specialized packaging to achieve high efficiency levels. The MG-WDSON-2 package represents a compact form factor designed to reduce board space while maintaining robust electrical characteristics for dynamic switching environments.

Single FETs, MOSFETs Replacement Considerations

The datasheet notes compatibility with the DirectFET® package ST footprint and outline. Verify pinout and thermal pad dimensions if substituting with components from other manufacturers claiming DirectFET® compatibility. Ensure replacement parts meet the same 60V rating and current handling capabilities.