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BSF450NE7NH3XUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 75V 5A/15A 2WDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSF450NE7NH3XUMA1
- Description：MOSFET N-CH 75V 5A/15A 2WDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta), 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：7V, 10V
- Rds On (Max) @ Id, Vgs：45mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs：6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：390 pF @ 37.5 V
- FET Feature：-
- Power Dissipation (Max)：2.2W (Ta), 18W (Tc)
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：MG-WDSON-2, CanPAK M™
- Package / Case：3-WDSON
Single FETs, MOSFETs datasheet and documents for BSF450NE7NH3XUMA1
Single FETs, MOSFETs Overview
The BSF450NE7NH3XUMA1 is an OptiMOS³ Power-MOSFET with a 75 V drain-source voltage rating. It features a maximum on-state resistance of 45 mΩ and supports a continuous drain current of 15 A at 25°C case temperature. The device utilizes the MG-WDSON-2 package, which provides dual-sided cooling capabilities and a low profile under 0.7 mm. Key electrical parameters include a gate threshold voltage range of 2.3 V to 3.8 V and a total gate charge of 6 nC.
Single FETs, MOSFETs Feature Summary
- Optimized technology specifically designed for DC/DC converter applications
- Dual-sided cooling structure combined with superior thermal resistance characteristics
- Low parasitic inductance design within a compact, low-profile form factor
Single FETs, MOSFETs Applications
- DC/DC converters
- Power supply modules
- Telecommunications equipment
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix XUMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure that the component meets all JEDEC qualification standards required for the target application environment before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when high efficiency and robust thermal management are critical for power conversion designs. The low figure of merit (gate charge multiplied by on-resistance) makes it suitable for high-frequency switching operations where minimizing conduction and switching losses is a primary design objective.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS³ family from Infineon Technologies, engineered for advanced power switching performance. It integrates N-channel normal level technology within the CanPAK S series, offering compatibility with DirectFET® package footprints while maintaining industry-standard reliability metrics for industrial and commercial electronics.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference lists or datasheets for verified substitutes. Do not assume functional equivalence based solely on pinout or voltage ratings without confirming thermal and dynamic parameter alignment.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
