BSG0813NDIATMA1

$2.52

Description：MOSFET 2N-CH 25V 19A/33A TISON8
Series：-

SKU:966d680358b8 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 25V 19A/33A TISON8
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Asymmetrical
FET Feature：Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)：25V
Current - Continuous Drain (Id) @ 25°C：19A, 33A
Rds On (Max) @ Id, Vgs：3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1100pF @ 12V
Power - Max：2.5W
Operating Temperature：-55°C ~ 155°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：PG-TISON-8
Grade：-
Qualification：-

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BSG0813NDIATMA1

Overview

The BSG0813NDIATMA1 is an N+N dual MOSFET from the OptiMOS™ 5 Industrial series, housed in a Power Block 5x6 (PG-TISON-8) package. It features a maximum drain-source voltage of 25 V and a continuous drain current of 50 A at 25°C. The device offers a typical gate charge of 5.6 nC to 16 nC and a logic-level threshold voltage range of 1.2 V to 2 V. Key electrical parameters include a maximum RDS(on) of 0.9 mΩ to 4 mΩ depending on test conditions, with a thermal resistance junction-to-case ranging from 1.8 K/W to 4.3 K/W. It operates within a temperature range of -55 °C to 150 °C.

Feature Summary

Monolithically integrated Schottky-like diode for efficient commutation
Logic level gate drive capability for direct microcontroller interfacing
Industrial-grade reliability with extended operating temperature range

Applications

Industrial motor control systems
Power supply output stages
DC-DC converter topologies

Procurement Notes

Verify the specific suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the industrial grade designation aligns with your system's environmental requirements. Cross-reference the PG-TISON-8 footprint dimensions during PCB layout to guarantee mechanical compatibility. Confirm RoHS compliance status through the latest product qualification report.

Selection Notes

Select this component when low gate charge and fast switching are critical for efficiency in 25 V applications. The dual N-channel configuration allows for half-bridge or synchronous rectifier designs. Consider the thermal resistance values for heatsinking calculations. The logic level feature simplifies driver circuit design by reducing required gate drive voltages.

Part Context

This part belongs to Infineon's OptiMOS™ 5 Industrial portfolio, designed for robust performance in demanding environments. The Power Block 5x6 package provides a compact solution with enhanced thermal dissipation capabilities compared to standard surface-mount packages. It complements other devices in the BSG series offering similar voltage ratings but varying current capacities.