BSH103,215

Single FETs, MOSFETs Overview

The BSH103,215 is an N-channel enhancement mode MOS transistor manufactured by Nexperia. It utilizes Trench MOSFET technology within a SOT-23 surface-mount package. Key electrical parameters include a drain-source voltage of 30 V and a continuous drain current of 0.85 A at 80 °C. The device features a low on-state resistance of 0.4 Ω at VGS = 4.5 V and a gate-source threshold voltage ranging from 0.4 V to 1 V. Total power dissipation reaches 0.5 W at 80 °C, with an operating junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Very low threshold voltage for efficient switching
• High-speed switching capability
• No secondary breakdown
• Direct interface compatibility with CMOS and TTL logic

Single FETs, MOSFETs Applications

• Power management circuits
• DC-to-DC converters
• Battery powered applications
• Glue-logic interfacing between logic blocks or periphery
• General purpose switching

Single FETs, MOSFETs Procurement Notes

Verify the component origin as Philips Semiconductors, now part of Nexperia, based on the datasheet history. Confirm the specific ordering suffix matches the required packaging configuration. Ensure anti-static handling protocols are followed during transport and assembly to prevent electrostatic discharge damage. Cross-reference the absolute maximum ratings against your system's operational limits before integration.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring direct interfacing with standard logic families like CMOS and TTL due to its low threshold characteristics. Consider the thermal resistance values when designing heat dissipation strategies for high-current applications. Evaluate the switching times and capacitance parameters to ensure suitability for the intended frequency range in DC-to-DC converter or general switching topologies.

Single FETs, MOSFETs Part Context

This device belongs to the BSH series of N-channel enhancement mode MOS transistors. It represents a legacy product originally specified by Philips Semiconductors, reflecting early trench technology implementations. The SOT-23 package provides a compact solution for low-power discrete semiconductor applications where space constraints are critical.

Single FETs, MOSFETs Replacement Considerations

BSH105,215

Single FETs, MOSFETs FAQ

What is the maximum drain-source voltage rating?

The maximum DC drain-source voltage (VDS) is rated at 30 V.

Does the BSH103 support direct connection to TTL logic?

Yes, the datasheet specifies direct interface compatibility with CMOS and TTL logic due to its very low threshold voltage.

What is the typical total gate charge?

The typical total gate charge (QG) is 2100 pC under conditions of VGS = 4.5 V, VDD = 15 V, and ID = 0.5 A.