BSH103,235

$0.37

Description：MOSFET N-CH 30V 850MA TO236AB
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:cee3fc20c8c6 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

BSH103,235 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 30V 850MA TO236AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSH103,235

Description：MOSFET N-CH 30V 850MA TO236AB
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：850mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V
Rds On (Max) @ Id, Vgs：400mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id：400mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs：2.1 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：83 pF @ 24 V
FET Feature：-
Power Dissipation (Max)：540mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-236AB
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSH103,235

BSH103,235

Single FETs, MOSFETs Overview

The BSH103,235 is an N-channel enhancement mode MOS transistor manufactured by Nexperia USA Inc. It is housed in a SOT23 surface-mount package with three leads: gate, source, and drain. The device supports a maximum drain-source voltage of 30 V and a continuous DC drain current of 0.85 A at a soldering point temperature of 80 °C. Key electrical characteristics include a gate-source threshold voltage ranging from 0.4 V to unspecified maximums under specific test conditions, and a total power dissipation capability of 0.5 W at 80 °C. The component features low on-state resistance and high-speed switching capabilities.

Single FETs, MOSFETs Feature Summary

N-channel enhancement mode operation
Very low threshold voltage for efficient switching
High-speed switching performance
No secondary breakdown

Single FETs, MOSFETs Applications

Power management systems
DC to DC converters
Battery powered applications
Glue-logic interface between logic blocks and periphery
General purpose switch

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as Nexperia USA Inc. or Philips Semiconductors depending on the production era. Confirm the package type is SOT23. Ensure the ordering suffix matches the required tape and reel configuration if applicable. Check for RoHS compliance status in the latest datasheet revision. Validate that the component meets the absolute maximum ratings for your specific operating environment.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring direct interface to CMOS and TTL logic levels due to its very low threshold. Consider the thermal resistance characteristics when designing heat dissipation strategies. Evaluate the switching times against the required signal frequencies. Ensure the drain-source voltage rating accommodates peak circuit voltages. Verify the package compatibility with the intended PCB footprint.

Single FETs, MOSFETs Part Context

This part belongs to the discrete semiconductor category, specifically within the MOS transistor family. It is designed for surface-mount technology (SMD) assembly. The product specification supersedes earlier data from January 1998. The component is classified under file SC13b for discrete semiconductors. It represents a standard solution for general-purpose switching tasks in consumer and industrial electronics.