BSH108,215

$0.41

Description：MOSFET N-CH 30V 1.9A TO236AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4a4287fa891b Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

BSH108,215 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 30V 1.9A TO236AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSH108,215

Description：MOSFET N-CH 30V 1.9A TO236AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：120mOhm @ 1A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：190 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：830mW (Tc)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-236AB
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSH108,215

BSH108,215

Single FETs, MOSFETs Overview

The BSH108,215 is an N-channel enhancement mode field-effect transistor manufactured by Nexperia USA Inc. It utilizes TrenchMOS technology and is housed in a SOT-23 surface-mount package with three leads. The device supports a maximum drain-source voltage of 30 V and a continuous drain current of 1.9 A at 25 °C. Total power dissipation reaches 0.83 W under the same conditions. The junction temperature range spans from -65 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchMOS technology for very fast switching performance.
Features logic level compatibility for efficient drive requirements.
Housed in a subminiature surface mount package.

Single FETs, MOSFETs Applications

Battery management systems
High speed switch circuits
Low power DC to DC converter designs

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through official Nexperia channels or authorized distributors. Confirm the specific ordering suffix matches the required packaging configuration. Ensure compliance with RoHS directives and REACH regulations as specified in the datasheet. Validate that the sourcing partner provides valid traceability documentation for quality assurance purposes.

Single FETs, MOSFETs Selection Notes

Evaluate thermal resistance characteristics against the intended heat dissipation environment. Consider the gate-source threshold voltage variations across the operating temperature range. Assess the on-state resistance requirements relative to the expected load current. Verify that the package footprint aligns with the printed circuit board layout constraints.

Single FETs, MOSFETs Part Context

This component belongs to the BSH108 series of N-channel enhancement mode field-effect transistors. It represents a plastic packaged solution designed for surface mounting applications. The product specification defines its electrical limits and thermal characteristics for industrial use cases.