BSH111BKR

Single FETs, MOSFETs Overview

The Nexperia BSH111BKR is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology, housed in a compact SOT23 (TO-236AB) surface-mounted plastic package. It features a drain-source voltage rating of 55 V and a continuous drain current capability of 210 mA at 4.5 V gate drive. The device exhibits low threshold voltage characteristics with a typical value of 1 V and fast switching performance supported by a total gate charge of 0.5 nC. Electrostatic discharge protection exceeds 3 kV under the Human Body Model standard.

Single FETs, MOSFETs Feature Summary

• Utilizes Trench MOSFET technology for enhanced performance
• Provides electrostatic discharge protection exceeding 3 kV HBM
• Features low threshold voltage for efficient control
• Delivers very fast switching capabilities

Single FETs, MOSFETs Applications

• Relay driver circuits
• High-speed line drivers
• Low-side load switches
• General switching circuits

Single FETs, MOSFETs Procurement Notes

Verify that the specific ordering suffix matches the required packaging configuration before finalizing procurement orders. Confirm that the component status remains active for new designs. Ensure that all electrical parameters align with the target application requirements to prevent operational failures. Cross-reference the manufacturer's latest documentation to validate any recent updates to specifications or pin configurations.

Single FETs, MOSFETs Selection Notes

Select this component when a small form factor is required alongside moderate voltage handling capabilities. The low gate charge supports high-frequency operation, making it suitable for applications demanding rapid transitions. Evaluate thermal constraints carefully, as power dissipation depends heavily on PCB copper area and ambient temperature conditions during design integration.

Single FETs, MOSFETs Part Context

This part belongs to the BSH111BK series of N-channel Trench MOSFETs manufactured by Nexperia. The 'KR' suffix typically denotes the tape and reel packaging format used for automated assembly processes. The device represents a standard solution for general-purpose switching tasks within consumer electronics and industrial control systems requiring compact footprints.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the SOT23 footprint and maintain equivalent 55 V breakdown voltage ratings. Verify that substitute components offer comparable gate charge values to ensure similar switching speeds. Check for identical pinout configurations to avoid circuit board redesign efforts during implementation.