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BSH114,215 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 100V 500MA TO236AB. Review the specifications below when checking this part for your BOM.
The BSH114,215 is an N-channel enhancement mode field-effect transistor manufactured by Nexperia USA Inc. It utilizes TrenchMOS technology and is housed in a SOT-23 surface-mount package with three leads. The device supports a maximum drain-source voltage of 100 V and a continuous drain current of 0.85 A at 25 °C. Key electrical parameters include a maximum on-state resistance of 500 mΩ at VGS = 10 V and ID = 0.5 A, and a total power dissipation of 0.83 W at 25 °C. The junction temperature range spans from -55 °C to +150 °C.
Verify the specific ordering code suffix against official Nexperia documentation to confirm packaging details and manufacturing origin. Ensure that the procurement channel provides valid traceability for the component batch. Cross-reference the datasheet revision date with the manufacturer's latest release to confirm technical accuracy before finalizing orders.
Select this component for circuits requiring high-speed switching capabilities within a compact surface-mount footprint. Evaluate thermal management requirements based on the specified junction-to-ambient thermal resistance values. Confirm that the gate-source voltage limits are respected during operation to maintain device reliability and prevent breakdown under varying load conditions.
This part belongs to the BSH series of N-channel enhancement mode MOSFETs produced by Nexperia. The '215' suffix typically denotes the standard tape and reel packaging configuration used for automated assembly processes. The product line focuses on providing efficient power switching solutions for consumer and industrial electronics markets.
BSH114,215
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