BSH121,135

$0.09

Description：SMALL SIGNAL FIELD-EFFECT TRANSI
Series：*
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:baa5606b1456 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

BSH121,135 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is SMALL SIGNAL FIELD-EFFECT TRANSI. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSH121,135

Description：SMALL SIGNAL FIELD-EFFECT TRANSI
Series：*
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for BSH121,135

BSH121,135

Single FETs, MOSFETs Overview

The BSH121,135 is an N-channel enhancement mode field-effect transistor manufactured by Nexperia USA Inc. It utilizes TrenchMOS technology and is housed in a SOT323 (SC-70) plastic surface-mount package. The device features a drain-source voltage rating of 55 V and a continuous drain current of 300 mA at 25 °C. Key electrical characteristics include a maximum on-state resistance of 4.0 Ω at VGS = 4.5 V and 5.0 Ω at VGS = 2.5 V. The component supports a junction temperature range from -65 °C to +150 °C with a total power dissipation of 0.7 W.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchMOS technology for very fast switching performance
Features low threshold voltage suitable for logic level applications
Housed in a subminiature SOT323 surface mount package

Single FETs, MOSFETs Applications

Battery management systems
High speed switching circuits
Logic level translation

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all necessary environmental compliance standards for the intended deployment region. Ensure the datasheet version corresponds to the latest revision history provided by the manufacturer before finalizing design integration.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with low gate drive requirements is needed. The low threshold voltage facilitates direct interfacing with standard logic families. Consider the thermal resistance values when designing heat dissipation strategies for high-density PCB layouts requiring reliable operation under varying ambient temperatures.

Single FETs, MOSFETs Part Context

This part belongs to the Nexperia portfolio of small-signal field-effect transistors. It is designed for general-purpose switching applications where space constraints are critical. The SOT323 package allows for efficient use of board real estate in portable and handheld electronic devices.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference documentation for verified substitute part numbers. Ensure any replacement maintains identical pinout configurations and electrical ratings to guarantee circuit compatibility without redesign.