BSH202,215

Single FETs, MOSFETs Overview

The BSH202,215 is a P-channel enhancement mode MOSFET from Nexperia. It features a drain-source voltage of -30 V and a continuous drain current of -0.52 A at 25 °C. The device has a maximum on-state resistance of 0.9 Ω at VGS = -10 V. Total power dissipation is rated at 0.417 W at 25 °C. Operating temperature ranges from -55 °C to +150 °C. Gate-source voltage limits are ±20 V. The component utilizes the SOT-23 surface-mount package.

Single FETs, MOSFETs Feature Summary

• Logic level compatible design with low threshold voltage for efficient battery-powered applications
• Fast switching characteristics suitable for high-speed digital interfacing
• Subminiature surface mount package for compact circuit board layouts

Single FETs, MOSFETs Applications

• Battery powered electronic devices
• High speed digital interfacing circuits
• Logic level signal translation

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required packaging format before purchase. Confirm that the component version aligns with the latest Philips Semiconductors product specification documentation. Ensure static discharge protection protocols are followed during handling due to the sensitive gate input structure inherent to this MOS transistor type.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel enhancement mode transistor is required for logic level compatibility. The low threshold voltage supports operation in battery-powered systems. Verify that the -30 V drain-source voltage rating meets the circuit requirements. Consider the SOT-23 package dimensions for PCB layout constraints.

Single FETs, MOSFETs Part Context

This part belongs to the BSH202 series of P-channel MOS transistors manufactured by Nexperia (formerly Philips Semiconductors). It is designed as a general-purpose field-effect power transistor. The device is supplied in the SOT23 subminiature surface mounting package, which is standard for small-scale integrated circuits and discrete semiconductors.

Single FETs, MOSFETs Replacement Considerations

BSH201,215

Single FETs, MOSFETs FAQ

What is the typical total gate charge for the BSH202?

The typical total gate charge is 2.9 nC under conditions of ID = -0.3 A, VDD = -15 V, and VGS = -10 V.

How does the on-state resistance vary with junction temperature?

The normalized drain-source on-state resistance increases as the junction temperature rises from 25 °C to 150 °C, particularly noticeable at lower gate-source voltages such as -4.5 V.