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BSH205G2VL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET P-CH 20V 2.3A TO236AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSH205G2VL
- Description：MOSFET P-CH 20V 2.3A TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：170mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.5 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：418 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：480mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-236AB
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSH205G2VL
Single FETs, MOSFETs Overview
The Nexperia BSH205G2VL is a P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology, housed in a SOT23 (TO-236AB) surface-mounted package. It features a drain-source voltage rating of -20 V and a continuous drain current of -2 A at 25 °C. The device exhibits a typical on-state resistance of 120 mΩ at VGS = -4.5 V and ID = -2 A. Total power dissipation reaches 890 mW in free air. The component is qualified to the AEC-Q101 standard for automotive applications.
Single FETs, MOSFETs Feature Summary
- Low threshold voltage for efficient switching
- Low on-state resistance to minimize conduction losses
- Trench MOSFET technology for enhanced performance
- AEC-Q101 qualification for automotive reliability
Single FETs, MOSFETs Applications
- Relay driver circuits
- High-speed line drivers
- High-side load switches
- General switching circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix 'VL' against the official Nexperia datasheet or distributor documentation to confirm it denotes the correct tape-and-reel packaging variant. Ensure the base part number matches the required electrical specifications and that the marking code aligns with manufacturing site codes defined in the product data sheet.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a compact P-channel switch with low gate drive requirements. The low threshold voltage facilitates operation with various logic levels. Consider the thermal resistance characteristics when designing PCB layouts, as power dissipation capabilities depend heavily on the copper pad area and ambient temperature conditions.
Single FETs, MOSFETs Part Context
This device belongs to the Nexperia BSH205G2 series of P-channel Trench MOSFETs. The series is characterized by its small SOT23 footprint and robust automotive-grade qualification. It serves as a discrete solution for power switching tasks where space constraints and high efficiency are critical design parameters.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the BSH205G2 family or other P-channel MOSFETs with identical pinouts and comparable RDS(on) and VDS ratings. Verify that any replacement meets the same AEC-Q101 qualification if automotive usage is intended.
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