BSL205NH6327XTSA1

Overview

The BSL205NH6327XTSA1 is an OptiMOS®2 dual N-channel enhancement-mode MOSFET in a PG-TSOP6 package. It features a 20 V drain-source voltage and supports up to 2.5 A continuous drain current at 25 °C, with a pulsed capability of 10 A. The device offers a maximum on-state resistance of 85 mΩ at VGS=2.5 V and 50 mΩ at VGS=4.5 V. Key electrical parameters include a gate threshold voltage range of 0.6 V to 1.2 V, total gate charge of 2.1 nC (typical), and power dissipation of 0.5 W. It operates within a temperature range of -55 °C to +150 °C.

Feature Summary

• Dual N-channel configuration for space-efficient circuit designs
• Super Logic Level technology enabling efficient operation at low gate voltages
• Avalanche rated for robustness against transient energy events
• Qualified according to AEC-Q101 standards for automotive reliability

Applications

• Automotive electronic control units
• Low-side switching applications
• Power management circuits requiring logic-level drive compatibility

Procurement Notes

Verify the component's authenticity by checking the manufacturer's marking code and ordering suffixes against official Infineon documentation. Ensure that the specific batch meets the required AEC-Q101 qualification standards if used in automotive contexts. Confirm the package type matches the PG-TSOP6 footprint requirements for your PCB layout.

Selection Notes

Select this component when a dual N-channel MOSFET with low gate charge and high transconductance is required. Its Super Logic Level feature makes it suitable for systems driven by 2.5 V or 4.5 V logic signals. Consider its thermal resistance and power dissipation limits relative to your ambient operating conditions and PCB copper area availability.

Part Context

This part belongs to Infineon's OptiMOS®2 family, designed for small-signal and small-power applications. It integrates two independent N-channel transistors into a single compact surface-mount package, optimizing board space while maintaining high performance characteristics typical of the series.

Replacement Considerations

BSL207NH6327XTSA1

FAQ

What is the maximum avalanche energy rating?

The single pulse avalanche energy rating is 10.8 mJ under conditions of ID=2.5 A and RGS=25 Ω.

How does the reverse diode perform?

The integrated reverse diode has a continuous forward current rating of 0.5 A and a typical forward voltage of 0.8 V at 25 °C.

Is the device compliant with environmental regulations?

Yes, the BSL205N is Pb-free, RoHS compliant, and halogen-free according to IEC61249-2-21.