BSL205NL6327HTSA1

Description：MOSFET 2N-CH 20V 2.5A TSOP6-6
Series：OptiMOS™

SKU:76700cd7b4d9 Category: FET, MOSFET Arrays Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 2.5A TSOP6-6
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：2.5A
Rds On (Max) @ Id, Vgs：50mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs：3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：419pF @ 10V
Power - Max：500mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：PG-TSOP6-6
Grade：-
Qualification：-

Download product information

BSL205NL6327HTSA1

Overview

The BSL205NL6327HTSA1 is a dual N-channel enhancement mode MOSFET from the OptiMOS®2 family, housed in a PG-TSOP6 package. It features a 20 V drain-source breakdown voltage and supports a continuous drain current of 2.5 A at 25 °C. The device offers a maximum on-state resistance of 50 mΩ at VGS=4.5 V and 85 mΩ at VGS=2.5 V. Key dynamic parameters include a total gate charge of 3.2 nV max and an input capacitance of 419 pF max. It operates within a temperature range of -55 °C to +150 °C.

Feature Summary

Dual N-channel configuration with Super Logic Level capability for efficient low-voltage drive integration.
Avalanche rated performance supporting robust operation under transient energy conditions.
Qualified according to AEC-Q101 standards for automotive reliability requirements.

Applications

Automotive electronic control units
Low-side switching applications
Power management circuits

Procurement Notes

Verify the specific ordering suffix HTSA1 against official Infineon documentation to confirm packaging details and material compliance status. Ensure compatibility with PG-TSOP6 footprint dimensions during PCB layout. Confirm that the component meets the required AEC-Q101 qualification level for your specific application environment before finalizing procurement.

Selection Notes

Select this component when a dual N-channel solution is required in a compact surface-mount package. The OptiMOS®2 technology provides optimized trade-offs between conduction losses and switching speed. Consider the 2.5 A continuous current rating and thermal resistance characteristics relative to your system's heat dissipation capabilities and ambient operating temperatures.

Part Context

This part belongs to the BSL205N series of small-signal transistors manufactured by Infineon Technologies. It utilizes silicon-based OptiMOS®2 technology designed for high efficiency and low power consumption. The series is engineered to meet stringent automotive industry standards while providing reliable performance in various switching applications.

Replacement Considerations

Consult official Infineon replacement guides for verified substitutes. Cross-reference pinout configurations and electrical specifications carefully to ensure functional equivalence without modifying existing circuit designs.