BSL214NL6327HTSA1

Overview

The BSL214NL6327HTSA1 is a dual N-channel small-signal MOSFET from Infineon Technologies, housed in a TSOP-6 surface-mount package. It features a drain-source breakdown voltage of 20 V and a continuous drain current of 2.5 A at 25°C. The device exhibits a maximum on-resistance of 50 mΩ at 4.5 V gate drive. Key electrical parameters include a gate charge of 3.2 nC and an input capacitance of 419 pF. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 500 mW.

Feature Summary

• Dual configuration integrating two independent N-channel enhancement-mode transistors in a single compact package for space-constrained designs.
• Optimized low on-resistance performance suitable for efficient switching applications with minimal conduction losses.
• Logic-level gate drive capability allowing direct interfacing with standard digital logic outputs without additional level shifting.

Applications

• Load switching in portable consumer electronics
• Battery protection circuits in mobile devices
• Signal routing and multiplexing in data processing systems

Procurement Notes

Verify the specific suffix HTSA1 against the manufacturer's latest datasheet to confirm tape-and-reel packaging specifications and RoHS compliance status. Ensure the ordering part number matches the exact pinout and thermal characteristics required by the design. Cross-reference with official Infineon distribution channels to validate component authenticity and traceability before integration into production schedules.

Selection Notes

Select this component when a dual N-channel topology is required in a TSOP-6 footprint. The 2.5 A current rating and 50 mΩ on-resistance make it suitable for moderate load applications. Consider the 20 V voltage limit and 500 mW power dissipation constraints during thermal management planning. Verify compatibility with 4.5 V logic levels for optimal switching efficiency.

Part Context

This part belongs to Infineon's BSL series of small-signal MOSFETs, designed for general-purpose switching tasks. The BSL214N variant specifically offers dual channel integration, distinguishing it from single-channel counterparts like the BSS214N. It utilizes silicon technology and is optimized for cost-effective solutions in high-volume consumer electronics manufacturing.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage is typically ±12 V, consistent with standard small-signal MOSFET specifications in this series.

Is this component automotive qualified?

Public documentation for the BSL214NL6327HTSA1 does not explicitly list AEC-Q100 qualification, unlike some other Infineon variants such as the BSS214NWH6327.

What is the typical turn-on delay time?

Specific switching timing parameters such as turn-on delay are not explicitly detailed in the provided summary data; refer to the full datasheet for precise dynamic characteristics.