BSL215CL6327HTSA1

BSL215CL6327HTSA1

  • Description:MOSFET N/P-CH 20V 1.5A TSOP6-6
  • Series:OptiMOS™

SKU:e6d2d5d0d59e Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N/P-CH 20V 1.5A TSOP6-6
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:1.5A
  • Rds On (Max) @ Id, Vgs:140mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 3.7µA
  • Gate Charge (Qg) (Max) @ Vgs:0.73nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:143pF @ 10V
  • Power - Max:500mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:PG-TSOP6-6
  • Grade:-
  • Qualification:-

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BSL215CL6327HTSA1

Overview

The BSL215CL6327HTSA1 is a dual enhancement-mode MOSFET array from Infineon's OptiMOS series, featuring one P-channel and one N-channel transistor in a TSOP-6 surface-mount package. It supports a drain-source voltage of 20 V with continuous drain currents of 1.5 A for both channels. The device exhibits low on-resistance values of 108 mΩ for the N-channel and 173 mΩ for the P-channel at specified conditions. Operating within a temperature range of -55°C to +150°C, it offers a power dissipation capacity of 500 mW and fast switching characteristics with rise and fall times under 15 ns.

Feature Summary

  • Integrated dual configuration combining P-channel and N-channel enhancement-mode transistors for complementary circuit applications
  • OptiMOS technology providing low on-resistance and optimized gate charge for efficient power switching
  • Automotive-grade reliability certified under AEC-Q101 standards for harsh environment operation

Applications

  • Low-side and high-side switching in automotive electronic control units
  • Load switching and protection circuits in industrial equipment
  • Power management modules requiring compact dual-transistor solutions

Procurement Notes

Verify the specific suffix CL against official Infineon documentation to confirm pinout and electrical tolerances, as suffixes often denote tape-and-reel packaging or specific quality grades. Confirm current production status and lifecycle phase directly with the manufacturer or authorized distributors before finalizing design-in decisions.

Selection Notes

Select this component when a compact dual MOSFET solution with mixed polarity is required for low-voltage switching applications. The TSOP-6 package suits space-constrained designs, while the AEC-Q101 qualification ensures suitability for automotive environments. Evaluate thermal performance based on the 500 mW power dissipation limit and ambient operating conditions.

Part Context

This part belongs to Infineon's OptiMOS family, which focuses on optimizing the trade-off between conduction losses and switching speed. The BSL215 series specifically targets cost-sensitive, high-volume applications requiring reliable dual-transistor arrays in small surface-mount packages for power distribution and signal switching tasks.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the TSOP-6 footprint, 20 V rating, and dual P/N channel configuration without altering functional parameters.

BSL215CL6327HTSA1BSL215CL6327HTSA1

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