BSL306NH6327XTSA1

Overview

The BSL306NH6327XTSA1 is a dual N-channel enhancement mode MOSFET from the OptiMOS 2 series, housed in a TSOP-6 surface-mount package. It features a maximum drain-source voltage of 30 V and a continuous drain current of 2.3 A at 25 °C. The device has a maximum on-state resistance of 57 mΩ at VGS=10 V and 93 mΩ at VGS=4.5 V. It supports pulsed currents up to 9 A and operates within a temperature range of -55 °C to 150 °C.

Feature Summary

• Dual N-channel configuration with logic-level gate drive capability rated for 4.5 V operation.
• Avalanche-rated design capable of handling single-pulse avalanche energy.
• Qualified according to AEC-Q101 automotive standards.
• High reverse diode dv/dt rating supporting fast switching applications.

Applications

• Low-side switching in automotive electronic control units
• Logic level interface circuits requiring dual channel isolation
• General purpose power management and load switching

Procurement Notes

Verify the component marking code H6327 against official Infineon documentation to confirm authenticity. Ensure the ordering suffix XTSA1 matches the required tape and reel packaging quantity of 3000 pieces per reel. Confirm RoHS compliance and halogen-free status requirements align with project specifications before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel solution is required in a compact TSOP-6 footprint. The low gate threshold voltage makes it suitable for direct interfacing with standard logic families. Consider the thermal resistance characteristics and derating curves if operating in high ambient temperature environments or under continuous load conditions.

Part Context

This part belongs to the OptiMOS 2 family of small-signal transistors designed by Infineon Technologies. The series focuses on optimizing the trade-off between on-resistance and gate charge for efficient switching performance. The specific model integrates two independent channels within a single package to save board space.

Replacement Considerations

BSL305SPEH6327XTSA1 (P-channel variant)

FAQ

What is the maximum single pulse avalanche energy?

The maximum single pulse avalanche energy is 10.8 mJ when the drain current is 2.3 A and the gate resistance is 25 Ω.

Does the device support automotive applications?

Yes, the BSL306N is qualified according to the AEC-Q101 standard for automotive electronics.

What is the typical reverse recovery time of the internal body diode?

The typical reverse recovery time is 14.4 ns under specified test conditions.