BSL308CH6327XTSA1

$0.76

Description：MOSFET N/P-CH 30V 2.3A TSOP6-6
Series：OptiMOS™

SKU:8c712a15af39 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 2.3A TSOP6-6
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：2.3A, 2A
Rds On (Max) @ Id, Vgs：57mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id：2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs：1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：275pF @ 15V
Power - Max：500mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：PG-TSOP6-6
Grade：Automotive
Qualification：AEC-Q101

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BSL308CH6327XTSA1

Overview

The BSL308CH6327XTSA1 is a complementary dual enhancement-mode MOSFET array from the OptiMOS P3 and OptiMOS 2 series. It integrates one P-channel and one N-channel transistor in a PG-TSOP-6 surface-mount package. The device supports a drain-source voltage of ±30 V with continuous drain currents of -2.0 A for the P-channel and 2.3 A for the N-channel at 25°C ambient temperature. Maximum on-resistance values are 80 mΩ for the P-channel and 57 mΩ for the N-channel at VGS=±10 V. The component is avalanche rated, qualified to AEC-Q101 standards, and operates within a junction temperature range of -55°C to 150°C.

Feature Summary

Complementary P-channel and N-channel configuration in a single package
Avalanche energy rated for robust operation under transient conditions
Logic level compatible with 4.5 V gate drive requirements
Automotive grade qualification according to AEC-Q101 standard

Applications

High-frequency switching power supplies
Computing system power management
Battery protection circuits
Renewable energy system interfaces

Procurement Notes

Verify the specific ordering suffix XTSA1 against official Infineon documentation to confirm tape and reel packaging specifications. Ensure that the PG-TSOP-6 footprint dimensions match the target PCB layout constraints. Confirm RoHS compliance status through current manufacturer declarations prior to final procurement authorization.

Selection Notes

Select this component when a compact solution requires both high-side and low-side switching capabilities within a single footprint. The complementary architecture reduces board space compared to discrete implementations. Verify that the thermal resistance characteristics align with the expected ambient operating conditions and power dissipation limits of the application design.

Part Context

This part belongs to the OptiMOS family, which utilizes trench technology to minimize on-state resistance and switching losses. The BSL308C variant specifically combines P3 and OptiMOS 2 technologies to offer optimized performance for small signal applications requiring high efficiency and reliability in industrial and automotive environments.