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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 2.3A TSOP6-6
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
- Rds On (Max) @ Id, Vgs：57mOhm @ 2.3A, 2.5V
- Vgs(th) (Max) @ Id：750mV @ 11µA
- Gate Charge (Qg) (Max) @ Vgs：1.7nC @ 2.5V
- Input Capacitance (Ciss) (Max) @ Vds：259pF @ 10V
- Power - Max：500mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：PG-TSOP6-6
- Grade：-
- Qualification：-
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Overview
The BSL806NH6327XTSA1 is a dual N-channel enhancement mode MOSFET from Infineon's OptiMOS™2 series, housed in a PG-TSOP6 package. It features an ultra logic level rating for 1.8V operation and is avalanche rated with AEC-Q101 qualification. Key electrical parameters include a drain-source voltage of 20 V, continuous drain current of 2.3 A at 25°C, and a maximum on-resistance of 57 mΩ at VGS=2.5V. The device supports a junction temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration within a single compact TSOP6 package
- Ultra Logic level capability optimized for 1.8V gate drive applications
- Avalanche rated design supporting robust energy handling
- Qualified according to AEC-Q101 automotive standards
Applications
- Automotive electronic control units requiring low-voltage switching
- Logic-level interface circuits for microcontrollers
- Power management modules utilizing 1.8V supply rails
Procurement Notes
Verify the specific ordering suffix H6327XTSA1 matches the required tape and reel quantity of 3000 pieces per reel. Confirm that the PG-TSOP6 package footprint aligns with the target PCB layout constraints. Ensure the component meets the RoHS and halogen-free requirements specified in the datasheet for environmental compliance.
Selection Notes
Select this component when a dual N-channel solution is needed for space-constrained designs operating at 1.8V logic levels. The 57 mΩ on-resistance at 2.5V provides efficient switching for moderate current loads up to 2.3A. Consider the thermal resistance characteristics if high ambient temperatures are expected in the application environment.
Part Context
This part belongs to the BSL806N family of small-signal transistors designed by Infineon Technologies. It utilizes silicon technology and is manufactured as a lead-free, RoHS-compliant device. The OptiMOS™2 technology platform focuses on optimizing the trade-off between conduction losses and switching performance for automotive and industrial applications.
Replacement Considerations
Direct substitutes must match the dual N-channel topology, 20V rating, and TSOP6 package. Verify equivalent Rds(on) values at 1.8V and 2.5V gate voltages to ensure circuit compatibility without redesigning the gate drive network.
