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The BSM10GP120B9BPSA1 is a Power Integrated Module (PIM) from Infineon Technologies, designed for high-efficiency power conversion. It integrates an IGBT with a fast recovery diode in a single package. The module features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 10 A at 25°C. Key electrical parameters include a saturation voltage of 2.3 V and a power dissipation rating of 85 W. It operates within a temperature range of -40°C to +150°C and utilizes the EconoDUAL 3 packaging format for optimized thermal performance.
Verify the specific suffix B9BP against official datasheets to confirm pinout and thermal characteristics. Confirm RoHS compliance status through manufacturer documentation. Ensure the component matches the required voltage and current ratings for the target application before procurement.
Select this module when a 1200 V rating and 10 A current capacity are required in a compact form factor. Consider the 2.3 V saturation voltage for efficiency calculations. Verify that the system can accommodate the 85 W power dissipation and the operating temperature limits specified in the technical data.
This component belongs to Infineon's IGBT Silicon Modules category, specifically within the PIM configuration. It is part of the broader portfolio of discrete and module semiconductors used in industrial power electronics and automotive applications.
Check for direct substitutes such as BSM10GP120 or variants with different suffixes. Ensure thermal resistance and pin compatibility match the existing PCB layout before substituting.