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Product Detailed Parameters
- Description：IGBT MOD 1200V 20A 100W
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：2.85V @ 15V, 10A
- Input：Three Phase Bridge Rectifier
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：20 A
- Power - Max：100 W
- Current - Collector Cutoff (Max)：500 µA
- Input Capacitance (Cies) @ Vce：600 pF @ 25 V
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Overview
The BSM10GP120BOSA1 is a Power Integrated Module (PIM) manufactured by Infineon Technologies, designed for high-voltage power conversion applications. It features an IGBT technology with a collector-emitter maximum voltage of 1200 V and a continuous collector current of 10 A at 25°C. The module incorporates integrated anti-parallel diodes and operates within a temperature range of -40°C to +125°C. Packaged in the EconoPIM3 form factor with screw mounting, it provides a compact solution for industrial power electronics. Key electrical parameters include a saturation voltage of 2.5 V and a maximum power dissipation of 160 W.
Feature Summary
- Integrates IGBTs and anti-parallel diodes into a single PIM configuration for simplified circuit design.
- Utilizes the EconoPIM3 package to provide a compact footprint suitable for space-constrained industrial applications.
- Features screw-mount installation for secure mechanical attachment and efficient thermal management.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels due to potential availability constraints. Confirm RoHS compliance status and specific ordering suffixes against official datasheets before procurement. Ensure storage conditions meet semiconductor handling standards to prevent moisture sensitivity issues prior to soldering.
Selection Notes
Select this module when a 1200V rating and 10A current capacity are required in a compact PIM format. Evaluate thermal resistance characteristics against the application's heat sink capabilities. Compare alternative packages like EconoPIM2 if size constraints differ. Verify gate drive requirements align with the specified 20V maximum gate-emitter voltage limits.
Part Context
This component belongs to Infineon's BSM series of Power Integrated Modules, which combine multiple switching elements into a single unit. The BSM10GP120BOSA1 specifically targets applications requiring moderate power levels with high voltage isolation. It represents a standard silicon IGBT solution within the company's broader portfolio of power semiconductors.
Replacement Considerations
Check for updated revisions such as BSM10GP120DLC or BSM10GP120DN2. Verify pin compatibility and thermal performance metrics before substituting. Consult official replacement guides for end-of-life notifications.
