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The BSM10GP120BPSA1 is a silicon IGBT module manufactured by Infineon Technologies, belonging to the EconoPIM family. It features a full bridge configuration with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 10 A at 25°C. The device utilizes screw mount installation within an EconoPIM package. Key electrical parameters include a collector-emitter saturation voltage of 2.3 V, a gate-emitter leakage current of 300 nA, and a power dissipation rating of 80 W. The operational temperature range spans from -40°C to +125°C, with a maximum gate-emitter voltage of 20 V.
Verify the specific ordering suffix BPSA1 against official Infineon documentation to confirm exact binning or revision status. Confirm availability through authorized distributors as standard stock levels may vary. Ensure compliance with RoHS directives and check for any end-of-life notices prior to final procurement decisions.
Select this component when a 1200V, 10A full bridge IGBT solution is required in a compact EconoPIM form factor. Evaluate the 2.3V saturation voltage against system efficiency targets. Verify that the 80W power dissipation capability aligns with the intended heatsinking strategy and ambient operating conditions.
This part belongs to Infineon's EconoPIM series, designed for high-density power applications. It integrates multiple IGBTs and diodes into a single module, simplifying PCB layout and reducing connection losses compared to discrete solutions. The series is widely used in industrial inverters and converters.
Check for direct pin-compatible replacements within the same EconoPIM family with identical voltage and current ratings. Verify thermal resistance and pinout compatibility before substituting with other manufacturers' modules.