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Product Detailed Parameters
- Description：MOSFET 2N-CH 1200V 120A MODULE
- Series：-
- Mfr：Rohm Semiconductor
- Package：Bulk
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：2.7V @ 22mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：14000pF @ 10V
- Power - Max：780W
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：-
- Package / Case：Module
- Supplier Device Package：Module
- Grade：-
- Qualification：-
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Overview
The BSM120D12P2C005 is a full Silicon Carbide (SiC) power module in the C-Type package, integrating SiC MOSFETs and SiC Schottky Barrier Diodes (SBD). It features a drain-source voltage of 1200 V and a continuous drain current of 134 A. The module supports a maximum junction temperature of 175 °C and offers a total power dissipation of 935 W. Its physical dimensions are 122.0 x 45.6 mm with a height of 17.5 mm. Designed for high-speed switching with low loss, it ensures reliable body diode conduction.
Feature Summary
- Full SiC power module combining SiC MOSFET and SiC SBD technologies
- High-speed switching capability with reduced switching losses
- Ensured reliability for body diode conduction applications
Applications
- Inverter systems requiring high efficiency and thermal performance
- Motor drive inverters utilizing wide bandgap semiconductor advantages
- Power conversion equipment benefiting from high-temperature operation
Procurement Notes
This component is designated as not recommended for new designs and is produced solely to support existing customers. Verification of current supply status and end-of-life timelines is essential before integration into any production planning or long-term maintenance strategies.
Selection Notes
Engineers should evaluate the C-Type housing dimensions and thermal characteristics against system constraints. The 1200 V rating and 134 A current capacity define the operational envelope. Compatibility with gate driver boards, such as the BSMGD3C12D24-EVK001, is necessary for optimal safety and driving performance.
Part Context
The BSM120D12P2C005 belongs to Rohm's CoolSiC product family, representing silicon carbide technology for power electronics. It utilizes the C-Type packaging standard, which provides specific mechanical interfaces for mounting and cooling solutions within industrial power modules.
Replacement Considerations
No public confirmed substitute part numbers are available. As this model is not recommended for new designs, alternative components must be selected based on matching electrical specifications and mechanical form factors.
