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The BSM150GB120DLCHOSA1 is a dual IGBT module from Infineon Technologies, rated for 1200V collector-emitter voltage and 150A continuous collector current. It features an integrated anti-parallel diode in a flange-mount package with seven terminals. The device supports a maximum junction temperature of 150°C and complies with RoHS standards. This component is designed for high-power switching applications requiring robust thermal management and electrical isolation.
Verify the specific suffix HOSA1 against official Infineon documentation to confirm exact manufacturing lot or regional compliance variations. Ensure compatibility with existing thermal interface materials and mounting hardware specifications before integration into final assemblies.
Select this module for applications requiring 1200V blocking capability and 150A continuous current handling. Consider the flange-mount package for direct heatsink attachment. Verify gate drive requirements align with standard IGBT control voltages and ensure adequate short-circuit withstand time protection is implemented in the circuit design.
This part belongs to the BSM series of IGBT modules, which are widely used in medium to high-power industrial applications. The GB120 designation indicates the 1200V voltage class, while DLC typically refers to the specific packaging and terminal configuration within the Infineon portfolio.
Direct replacements include BSM150GB120DLC. Verify pinout compatibility and thermal resistance values when substituting. Cross-reference with BSM150GB120DN2 if different terminal configurations are acceptable.