ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT MODULE 1700V 300A 1250W
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 150A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：300 A
- Power - Max：1250 W
- Current - Collector Cutoff (Max)：300 µA
- Input Capacitance (Cies) @ Vce：10 nF @ 25 V
Download product information
Overview
The BSM150GB170DLCE3256HDLA1 is a half-bridge IGBT module manufactured by Infineon Technologies. It features a maximum collector-emitter breakdown voltage of 1700 V and a nominal collector current of 300 A. The module supports a power dissipation capacity of 1250 W. This component utilizes silicon technology for high-power switching applications.
Feature Summary
- Half-bridge configuration for efficient power conversion
- High voltage rating suitable for demanding industrial environments
- Robust thermal management capabilities
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the exact part number suffix against official Infineon documentation to ensure compatibility with specific application requirements. Confirm availability status as distribution channels may vary. Cross-reference datasheet specifications with system design parameters before procurement to guarantee electrical and thermal performance alignment.
Selection Notes
Select this module based on its 1700 V blocking capability and 300 A current handling capacity. Ensure the cooling solution matches the 1250 W power dissipation requirement. Evaluate the half-bridge topology against circuit design needs. Verify package dimensions and mounting requirements for mechanical integration within the target assembly.
Part Context
This component belongs to Infineon's IGBT module portfolio, designed for medium to high-power applications. It represents a standard silicon-based solution offering reliable performance in industrial settings. The module integrates fast recovery diodes alongside IGBTs for complete switching functionality.
Replacement Considerations
Consult official Infineon substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence when considering cross-brand replacements. Ensure thermal interface material specifications align with new component requirements.
