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The BSM15GD120DN2BOSA1 is a single IGBT module from Infineon's EconoDUAL™ 3 family. It features an N-channel Insulated Gate Bipolar Transistor with an anti-parallel Fast Recovery Freewheeling Diode (FRD). The device has a collector-emitter breakdown voltage of 1200 V and a nominal collector current of 15 A at 25°C case temperature. Key electrical parameters include a maximum DC collector current of 30 A, a typical saturation voltage of 1.75 V at 15 A, and a reverse recovery charge of 48 nC for the diode. The module utilizes copper-clad direct bond copper (DBC) substrate technology for enhanced thermal performance.
Verify the specific suffix BOSA1 against the manufacturer's official datasheet to confirm pinout compatibility and terminal plating specifications. Ensure that the ordering part number matches the exact revision required for your application, as minor manufacturing updates may affect mechanical dimensions or material composition without changing the base model designation.
Select this component for applications requiring compact form factors with moderate current ratings up to 15 A. Evaluate the thermal resistance characteristics against your system's cooling strategy, as the EconoDUAL™ 3 package relies on effective heatsinking to maintain junction temperatures within safe operating limits during continuous operation.
This module belongs to Infineon's EconoDUAL™ 3 series, designed for high-power density industrial applications. It succeeds previous generations by offering improved thermal performance and lower stray inductance, making it suitable for modern high-frequency switching requirements in power electronics systems.
Cross-reference with other Infineon modules in the same current and voltage class, such as the BSM15GD120DN2, ensuring mechanical footprint and pin configuration compatibility before substitution.