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The BSM15GP120BOSA1 is a Power Integrated Module (PIM) manufactured by Infineon Technologies, classified as an IGBT Silicon Module. It features a complex configuration with seven internal elements housed in a MODULE-24 package. The device supports a collector-emitter maximum voltage of 1200 V and a continuous collector current of 35 A at 25°C. Key electrical parameters include a gate-emitter maximum voltage of 20 V and a maximum power dissipation of 180 W. The module operates within a temperature range of -40°C to +150°C and utilizes screw mount installation.
Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm exact manufacturing lot attributes and compliance status. Confirm availability status as distribution channels may list obsolete or limited stock items. Ensure the component matches the required MODULE-24 pinout and flange mount specifications for your application board.
Select this module when a 1200V rating and approximately 35A continuous current capacity are required in a compact form factor. Consider the 180W power dissipation limit and the need for adequate heatsinking to maintain junction temperatures below 150°C. Verify that the complex internal configuration aligns with the specific circuit topology requirements of the design.
This component belongs to the BSM series of Power Integrated Modules from Infineon, designed for medium-power applications. The BOSA1 suffix typically denotes specific packaging or qualification variants within the broader BSM15GP120 family. These modules are engineered to replace discrete component solutions, offering improved reliability and reduced assembly complexity for industrial power conversion systems.
Direct replacements must match the 1200V/35A specification and MODULE-24 footprint. Check for updated Infineon part numbers within the same GP series that may offer enhanced thermal characteristics or updated RoHS compliance while maintaining identical pin configurations.