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The BSM15GP120BPSA1 is a Power Integrated Module (PIM) manufactured by Infineon Technologies, utilizing silicon IGBT technology. It features a complex internal configuration with a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 35 A at 25°C. The module operates within a temperature range of -40°C to +150°C and has a maximum power dissipation of 180 W. It employs an EconoDUAL package style for flange mounting.
Verify the specific suffix 'BPSA1' against official Infineon documentation to confirm exact revision status and RoHS compliance details. Cross-reference the part number alias SP000100379 or BSM15GP120 in datasheets to ensure functional equivalence with legacy listings before procurement.
Select this component for applications requiring high voltage isolation and moderate current handling up to 35 A. Ensure the cooling system supports the 180 W power dissipation limit. Verify that the control circuitry accommodates the 20 V gate-emitter voltage specification for reliable switching operation.
This module belongs to Infineon's IGBT Silicon Modules family, specifically designed for power conversion applications. It represents a consolidated solution replacing discrete components, offering reduced parasitic inductance and improved reliability compared to individual transistor assemblies in similar power ranges.
Direct substitutes include BSM15GP120 and BSM15GP120DL. Verify pinout compatibility and thermal resistance values when transitioning between these variants to ensure mechanical fit and electrical performance alignment.