BSM15GP60BOSA1

Overview

The BSM15GP60BOSA1 is a silicon IGBT module from Infineon Technologies, housed in an EconoPIM2 package. It features a hex configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 70 A at 25°C. The saturation voltage is 2.2 V, with a power dissipation rating of 250 W. Operating temperatures range from -40°C to +125°C, and it utilizes screw mount installation.

Feature Summary

• Hex configuration for three-phase inverter applications
• EconoPIM2 packaging for chassis mounting
• Silicon technology construction

Applications

• Three-phase inverters
• Low power industrial drives
• Cost-effective motor control systems

Procurement Notes

Verify component authenticity through authorized Infineon distributors or certified partners. Confirm the specific suffix matches the required datasheet revision. Check for end-of-life status or discontinuation notices prior to procurement. Ensure storage conditions comply with manufacturer guidelines for moisture sensitivity levels.

Selection Notes

Select this module for low-power applications requiring a six-pack IGBT topology. Evaluate thermal management requirements against the 250 W power dissipation limit. Consider the 600 V voltage rating for compatibility with standard DC bus voltages. Verify that the EconoPIM2 footprint fits the target mechanical design constraints.

Part Context

This component belongs to Infineon's IGBT Silicon Modules category. It is part of the broader family of discrete semiconductor modules designed for power conversion. The EconoPIM2 series provides a standardized form factor for compact power electronics designs.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.