BSM180C12P2E202

$510.00

Description：SICFET N-CH 1200V 204A MODULE
Series：-
Mfr：Rohm Semiconductor
Package：Tray

SKU:823e934c1925 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

BSM180C12P2E202 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is SICFET N-CH 1200V 204A MODULE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSM180C12P2E202

Description：SICFET N-CH 1200V 204A MODULE
Series：-
Mfr：Rohm Semiconductor
Package：Tray
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：204A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds：20000 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1360W (Tc)
Operating Temperature：175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：Module
Package / Case：Module

Single FETs, MOSFETs datasheet and documents for BSM180C12P2E202

BSM180C12P2E202

Single FETs, MOSFETs Overview

The BSM180C12P2E202 is a Silicon Carbide (SiC) power module manufactured by ROHM Semiconductor. It features an N-channel configuration with a drain-source voltage of 1200V and a continuous drain current of 204A. The device operates within a junction temperature range up to 175°C and supports a maximum storage temperature of 125°C. Total power dissipation is rated at 1360W. The physical package dimensions are 152.0mm x 62.0mm with a thickness of 18.0mm.

Single FETs, MOSFETs Feature Summary

Utilizes Silicon Carbide technology for high-speed switching capabilities
Designed for low surge and low switching loss performance
Exhibits reduced temperature dependence characteristics

Single FETs, MOSFETs Applications

Full SiC module drive board integration
Evaluation kit testing with BSGD2G12D24-EVK001 gate driver
Snubber module circuit implementation

Single FETs, MOSFETs Procurement Notes

Verify the specific status of this component before procurement, as documentation indicates it may be designated for existing customers only and not recommended for new designs. Confirm availability through official ROHM channels or authorized distributors. Ensure that the E-type housing variant matches your system requirements. Check for any end-of-life notifications or production support limitations associated with this specific part number.

Single FETs, MOSFETs Selection Notes

Select this module when high-speed switching and low thermal dependence are required in power conversion systems. The E-type housing format must be compatible with the intended gate driver, such as the BSGD2G12D24-EVK001. Consider the 175°C junction temperature limit for thermal management design. Verify that the 1200V rating and 204A current capacity align with the specific load requirements of the application.

Single FETs, MOSFETs Part Context

This component belongs to the BSM series of Silicon Carbide power modules from ROHM Semiconductor. It is designed for use in advanced power electronics applications requiring efficient high-voltage switching. The module integrates SiC MOSFET technology to enhance performance over traditional silicon devices. It is often paired with specialized evaluation boards and gate drivers for optimal operation and safety driving.