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Product Detailed Parameters
- Description：MOSFET 2N-CH 1200V 180A MODULE
- Series：-
- Mfr：Rohm Semiconductor
- Package：Bulk
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：180A (Tc)
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：5.6V @ 50mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：900pF @ 10V
- Power - Max：880W
- Operating Temperature：175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Module
- Supplier Device Package：Module
- Grade：-
- Qualification：-
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Overview
The BSM180D12P3C007 is a Silicon Carbide (SiC) power module manufactured by ROHM Semiconductor. It features a half-bridge configuration integrating SiC UMOSFET and SiC Schottky Barrier Diode (SBD). The device supports a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 180 A. Key electrical parameters include a gate-source voltage range of -4 V to +22 V, a threshold voltage of 5.6 V, and a maximum power dissipation of 880 W. Operating temperatures range from -40°C to +150°C. The module utilizes screw mount installation within a bulk package.
Feature Summary
- Integrates SiC UMOSFET and SiC SBD for high-frequency operation with reduced switching loss
- Optimized design minimizes stray inductance compared to existing solutions
- Supports high-temperature operation up to 150°C
Applications
- Motor drive systems
- Chopper circuits
- High-power electronic designs requiring SiC technology
Procurement Notes
Verify the specific suffix C007 against official ROHM documentation to confirm pinout and thermal characteristics. Ensure compatibility with screw mount requirements and check for RoHS compliance details in the latest datasheet revision before procurement.
Selection Notes
Select this component for applications demanding high efficiency and high-frequency switching capabilities. The 1.2 kV rating and 180 A current capacity suit medium-to-high power industrial converters. Consider thermal management needs given the 880 W dissipation rating and ensure gate drive voltages align with the specified -4 V to +22 V range.
Part Context
This part belongs to the BSMx series of SiC power modules from ROHM Semiconductor. It represents a discrete power solution designed to replace traditional silicon-based IGBT modules in applications where higher switching speeds and lower conduction losses are critical for system performance.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Consult official ROHM documentation for direct replacements or cross-reference options.
