BSM200GA120DLCSHOSA1

$151.20

Description：IGBT MOD 1200V 370A 1450W
Series：-

SKU:86da01f4eed2 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 1200V 370A 1450W
Series：-
Mfr：Infineon Technologies
Package：Bulk,Tray
IGBT Type：-
Configuration：Single
Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 200A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 125°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：370 A
Power - Max：1450 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：13 nF @ 25 V

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BSM200GA120DLCSHOSA1

Overview

The BSM200GA120DLCSHOSA1 is a single IGBT module from Infineon Technologies, rated at 1200V and 370A. It features a maximum power dissipation of 1450W and a typical collector-emitter saturation voltage of 2.6V at 200A with a 15V gate drive. The component utilizes chassis mount packaging for high-power industrial applications.

Feature Summary

Single IGBT configuration designed for robust high-power switching
Integrated thermal management capabilities within the module structure
Chassis mount design facilitating secure installation in heavy-duty systems

Applications

Industrial motor drives
High-power inverters
Uninterruptible power supplies

Procurement Notes

Verify the exact suffix SHOSA1 against official Infineon documentation to confirm specific pinout or thermal interface variations. Ensure compatibility with existing cooling solutions due to the chassis mount requirement. Cross-reference datasheet revisions to confirm electrical characteristics match system requirements before integration.

Selection Notes

Select this module for applications requiring high current handling up to 370A and voltage ratings of 1200V. Consider the 1450W power dissipation limit when designing thermal management systems. Evaluate the 2.6V saturation voltage impact on conduction losses relative to switching frequency requirements in the target circuit topology.

Part Context

This component belongs to Infineon's high-power IGBT module portfolio, specifically engineered for demanding industrial environments. It represents a solution for converting and controlling electrical energy in systems where reliability and high current capacity are critical operational parameters.

Replacement Considerations

Consult official Infineon substitution guides for compatible alternatives. Verify that any substitute matches the 1200V rating, 370A current capacity, and chassis mount form factor to ensure mechanical and electrical compatibility without redesigning the host system.