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The BSM200GB120DLCHOSA1 is a dual IGBT module from Infineon Technologies, rated for 1200 V collector-emitter voltage and 200 A continuous collector current. It features an integrated anti-parallel diode in a half-bridge configuration within a flange-mount package. The component utilizes TrenchStop technology to optimize switching performance and conduction losses. Designed for industrial applications, it supports a maximum junction temperature of 150°C and includes an NTC thermistor for thermal monitoring.
Verify the complete part number including the HOSA1 suffix against official Infineon documentation to ensure correct pinout and specification alignment. Confirm RoHS compliance status and lead times through authorized distributors. Request the latest datasheet to validate thermal characteristics and gate drive requirements before finalizing procurement orders.
Select this module for high-power applications requiring robust current handling and reliable thermal management. Ensure the cooling system can maintain the junction temperature below 150°C under peak load conditions. Verify that the gate drive circuit provides appropriate voltage levels and current capabilities for the specific IGBT variant.
This component belongs to the EconoPACK family of IGBT modules, known for their compact design and high power density. The BSM series represents a standard offering for general-purpose industrial power conversion, balancing performance with cost-effectiveness. It serves as a core switching element in various AC/DC and DC/AC conversion topologies.
Direct replacements must match the 1200V/200A rating and EconoPACK form factor. Consider variants like BSM150GB120DLC for lower current needs or BSM300GB120DLC for higher capacity, ensuring pin compatibility and thermal interface alignment.
The maximum operating junction temperature is 150°C.
Yes, the module includes an integrated NTC thermistor for thermal monitoring.
It uses a flange-mount package designed for direct heatsink attachment.