BSM200GB120DN2HOSA1

BSM200GB120DN2HOSA1

  • Description:IGBT MOD 1200V 290A 1400W
  • Series:-

SKU:226853cff62b Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MOD 1200V 290A 1400W
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:-
  • Configuration:Half Bridge
  • Vce(on) (Max) @ Vge, Ic:3V @ 15V, 200A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):290 A
  • Power - Max:1400 W
  • Current - Collector Cutoff (Max):4 mA
  • Input Capacitance (Cies) @ Vce:13 nF @ 25 V

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BSM200GB120DN2HOSA1

Overview

The BSM200GB120DN2HOSA1 is a single IGBT module manufactured by Infineon Technologies. It features a maximum collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 200 A. The module has a maximum power dissipation capacity of 850 W at a case temperature of 25°C. It utilizes a baseplate mounting configuration within a standardized module package. The component operates with a standard input type and supports a maximum junction temperature of 150°C.

Feature Summary

  • Single-channel IGBT configuration for high-power switching applications
  • Robust thermal management via baseplate mounting design
  • Standard gate input interface for straightforward driver integration

Applications

  • Industrial motor drives and inverters
  • Uninterruptible power supply (UPS) systems
  • High-frequency welding equipment

Procurement Notes

Verify the specific suffix HOSA1 against the official datasheet to confirm RoHS compliance and packaging details. Check the manufacturer's lifecycle status, as this part may be discontinued or subject to limited availability. Ensure the ordering quantity matches the manufacturer's standard packing unit to avoid handling variations.

Selection Notes

Select this module when a 1200 V rating and 200 A current capacity are required in a single-chip configuration. Compare the 850 W power dissipation limit against the application's thermal constraints. Verify that the baseplate mounting style fits the available heatsink infrastructure and that the 150°C junction temperature aligns with the system's cooling capabilities.

Part Context

This component belongs to the BSM200GB120DN2 series from Infineon. It shares the core electrical specifications with variants differing only in packaging or environmental qualification suffixes. The GB designation typically indicates a specific package family optimized for industrial power conversion, distinct from other series like BYM or BSM with different current ratings.

Replacement Considerations

Direct replacements include the BSM200GB120DN2 without the HOSA1 suffix if packaging compatibility is confirmed. Cross-reference pinouts and thermal resistance values with equivalent modules from other manufacturers offering 1200V/200A single IGBT packages.

BSM200GB120DN2HOSA1BSM200GB120DN2HOSA1

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