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The BSM200GB120DN2HOSA1 is a single IGBT module manufactured by Infineon Technologies. It features a maximum collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 200 A. The module has a maximum power dissipation capacity of 850 W at a case temperature of 25°C. It utilizes a baseplate mounting configuration within a standardized module package. The component operates with a standard input type and supports a maximum junction temperature of 150°C.
Verify the specific suffix HOSA1 against the official datasheet to confirm RoHS compliance and packaging details. Check the manufacturer's lifecycle status, as this part may be discontinued or subject to limited availability. Ensure the ordering quantity matches the manufacturer's standard packing unit to avoid handling variations.
Select this module when a 1200 V rating and 200 A current capacity are required in a single-chip configuration. Compare the 850 W power dissipation limit against the application's thermal constraints. Verify that the baseplate mounting style fits the available heatsink infrastructure and that the 150°C junction temperature aligns with the system's cooling capabilities.
This component belongs to the BSM200GB120DN2 series from Infineon. It shares the core electrical specifications with variants differing only in packaging or environmental qualification suffixes. The GB designation typically indicates a specific package family optimized for industrial power conversion, distinct from other series like BYM or BSM with different current ratings.
Direct replacements include the BSM200GB120DN2 without the HOSA1 suffix if packaging compatibility is confirmed. Cross-reference pinouts and thermal resistance values with equivalent modules from other manufacturers offering 1200V/200A single IGBT packages.