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Product Detailed Parameters
- Description：BSM200GB170DL - IGBT MODULE
- Series：*
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The BSM200GB170DLCHOSA1 is a dual IGBT module manufactured by Infineon Technologies, belonging to the BSM series. It features a silicon technology base with a maximum collector-emitter voltage (VCEO) of 1.7 kV. The device supports a continuous collector current of 200 A at 25°C and exhibits a collector-emitter saturation voltage of 2.6 V. Key electrical parameters include a gate-emitter leakage current of 200 nA and a power dissipation rating of 960 W. The module operates within a temperature range of -40°C to +125°C and utilizes screw mount installation.
Feature Summary
- Dual configuration for efficient half-bridge circuit integration
- Robust thermal management capabilities suitable for high-power applications
- Standardized mechanical dimensions for compatibility with existing cooling systems
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify component authenticity through authorized Infineon distributors or certified supply chain partners. Confirm RoHS compliance status and check for end-of-life notifications prior to procurement. Ensure storage conditions adhere to manufacturer guidelines to prevent moisture sensitivity damage during handling and assembly processes.
Selection Notes
Evaluate thermal resistance requirements against system heat sink capabilities to ensure safe operating junction temperatures. Compare saturation voltage characteristics with alternative modules to optimize conduction losses. Verify that the 1.7 kV voltage rating provides adequate margin for the specific DC bus voltage and transient overvoltage conditions present in the target application design.
Part Context
This component belongs to Infineon's BSM series of discrete IGBT modules, designed for medium to high-power switching applications. It serves as a direct replacement for the BSM200GB170DLC variant, with the HOSA1 suffix indicating specific packaging and environmental compliance attributes defined by the manufacturer.
Replacement Considerations
The BSM200GB170DLC is a confirmed substitute part number for this component. When replacing, verify pinout compatibility and mounting hole patterns to ensure mechanical interchangeability without redesigning the PCB or heatsink interface.
