BSM250D17P2E004

Overview

The BSM250D17P2E004 is a full Silicon Carbide (SiC) power module manufactured by ROHM, rated at 1700V and 250A. It integrates ROHM-produced SiC MOSFETs and SiC Schottky Barrier Diodes (SBD). The module utilizes new coating materials and manufacturing processes to prevent insulation breakdown and suppress leakage current increases in high-temperature, high-humidity environments. In High Voltage High Humidity High Temperature Reverse Bias (HV-H3TRB) testing at 85°C/85% RH with 1360V applied for over 1,000 hours, it demonstrated superior reliability compared to IGBT modules. Its on-resistance performance is optimized to be 10% lower than comparable standard products.

Feature Summary

• Ensures high reliability in high-temperature and high-humidity environments through new chip coating materials and process methods that prevent insulation breakdown.
• Achieves lower conduction resistance than comparable standard products due to the optimal combination of internally produced SiC SBDs and SiC MOSFETs.
• Demonstrates exceptional durability under HV-H3TRB stress conditions, maintaining functionality beyond 1,000 hours without fault.

Applications

• Inverters for industrial equipment power supplies
• Converters for outdoor power generation systems
• Evaluation devices such as charge/discharge testers

Procurement Notes

Verify component authenticity against official ROHM documentation prior to integration. Confirm that the specific part number matches the required 1700V/250A specifications. Ensure handling procedures account for the module's sensitivity to electrostatic discharge and mechanical stress during installation into industrial power systems.

Selection Notes

Select this module when system voltage requirements exceed 1200V but remain below 1700V, specifically where high reliability in humid environments is critical. It serves as a direct alternative to 1700V IGBT modules where higher efficiency and reduced thermal management complexity are desired. Verify compatibility with existing gate drive circuits designed for SiC devices.

Part Context

This module addresses the market demand for higher voltage SiC solutions in industrial applications. While 1200V SiC products are common, 1700V options have historically relied on IGBTs due to reliability concerns. This product represents ROHM's expansion into high-voltage full-SiC modules, leveraging their internal production of both MOSFETs and SBDs to optimize performance.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Designers replacing IGBT modules should verify thermal interface requirements and gate drive voltage levels suitable for SiC technology.