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The Infineon BSM25GB120DN2 is a single IGBT module rated for 1200 V collector-emitter voltage and 25 A continuous collector current. It utilizes EconoPACK™ 3 packaging with screw mounting and features seven terminals. The device supports a maximum power dissipation of 300 W and operates at junction temperatures up to +150 °C. Key electrical parameters include a maximum gate-emitter voltage of ±20 V and a typical saturation voltage of 2.8 V. The module dimensions are 106.4 x 61.4 x 30.5 mm, designed for industrial power conversion applications requiring reliable thermal management.
Verify the specific suffix DN2 against official datasheets to confirm it denotes standard TrenchStop™ IGBT7 technology rather than DLC variants. Ensure compatibility with required gate drive voltages and thermal interface materials before procurement. Cross-reference part numbers with manufacturer catalogs to avoid obsolete or substituted components.
Select this component when a single-chip solution is required for 1200 V circuits with currents around 25 A. Consider the 300 W power dissipation limit and ensure adequate heatsinking to maintain junction temperatures below 150 °C. Verify that the screw-mount configuration fits the mechanical design constraints of the target application.
This module belongs to Infineon's EconoPACK™ 3 series, which combines high power density with robust packaging. The BSM prefix indicates an insulated gate bipolar transistor module from the company's legacy Siemens/Infineon portfolio. It represents a standard configuration within the 1200 V family, balancing performance and cost for general-purpose industrial electronics.
BSM25GB120DLC offers similar voltage and current ratings but features Low Loss (DLC) technology. BSM25GAL120DN2 provides a dual-unit configuration instead of a single unit. Verify pinout compatibility and thermal characteristics before substituting these alternatives.