BSM25GB120DN2

BSM25GB120DN2

$27.89
  • Description:IGBT MODULE
  • Series:-

SKU:a14f26c1b305 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:-
  • Configuration:Half Bridge
  • Vce(on) (Max) @ Vge, Ic:3V @ 15V, 25A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):38 A
  • Power - Max:200 W
  • Current - Collector Cutoff (Max):800 µA
  • Input Capacitance (Cies) @ Vce:1.65 nF @ 25 V

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BSM25GB120DN2

Overview

The Infineon BSM25GB120DN2 is a single IGBT module rated for 1200 V collector-emitter voltage and 25 A continuous collector current. It utilizes EconoPACK™ 3 packaging with screw mounting and features seven terminals. The device supports a maximum power dissipation of 300 W and operates at junction temperatures up to +150 °C. Key electrical parameters include a maximum gate-emitter voltage of ±20 V and a typical saturation voltage of 2.8 V. The module dimensions are 106.4 x 61.4 x 30.5 mm, designed for industrial power conversion applications requiring reliable thermal management.

Feature Summary

  • Integrates TrenchStop™ technology for optimized switching performance and low conduction losses.
  • Features integrated NTC thermistor for precise real-time temperature monitoring.
  • Utilizes EconoPACK™ 3 housing for compact footprint and efficient heat dissipation.

Applications

  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • Induction heating systems

Procurement Notes

Verify the specific suffix DN2 against official datasheets to confirm it denotes standard TrenchStop™ IGBT7 technology rather than DLC variants. Ensure compatibility with required gate drive voltages and thermal interface materials before procurement. Cross-reference part numbers with manufacturer catalogs to avoid obsolete or substituted components.

Selection Notes

Select this component when a single-chip solution is required for 1200 V circuits with currents around 25 A. Consider the 300 W power dissipation limit and ensure adequate heatsinking to maintain junction temperatures below 150 °C. Verify that the screw-mount configuration fits the mechanical design constraints of the target application.

Part Context

This module belongs to Infineon's EconoPACK™ 3 series, which combines high power density with robust packaging. The BSM prefix indicates an insulated gate bipolar transistor module from the company's legacy Siemens/Infineon portfolio. It represents a standard configuration within the 1200 V family, balancing performance and cost for general-purpose industrial electronics.

Replacement Considerations

BSM25GB120DLC offers similar voltage and current ratings but features Low Loss (DLC) technology. BSM25GAL120DN2 provides a dual-unit configuration instead of a single unit. Verify pinout compatibility and thermal characteristics before substituting these alternatives.

BSM25GB120DN2BSM25GB120DN2
$27.89
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